Resonant Light Scattering by Optical Phonons in a Homoepitxial n-GaP Nanolayer Grown on a (001)n-GaP Substrate by Bairamov, B. H.

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Resonance Light Scattering by Optical Phonons in Diamond Crystal with Nitogen-Vacancy Centres by Bairamov, B. H., Toropov, V. V., Bairamov, F. B.

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Influence of Impurities on Polarization Properties of Lattice Vibrations by Bairamov, B. H., Toporov, V. V., Bayramov, F. B.

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Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation by Lubyankina, E. A., Toporov, V. V., Mizerov, A. M., Timoshnev, S. N., Shubina, K. Yu, Bairamov, B. H., Bouravleuv, A. D.

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Recombination radiation of heteroepitaxial structures with InAs quantum dots grown on surface of (311)B GaAs by MBE by Kuznetsova, Y A, Bayramov, F B, Toporov, V V, Bairamov, B H, Yu Rud, V, Glinushkin, A P

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Raman analysis of epitaxial GaN layers grown on Si (111) by PA MBE by Lubyankina, E A, Toporov, V V, Mizerov, A M, Timoshnev, S N, Shubina, K Yu, Bairamov, B H, Bouravleuv, A D

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Raman spectroscopic characterization of anti-diabetic drug metformin hydrochloride by Bayramov, F B, Toporov, V V, Chakchir, O B, Anisimov, V N, Rud, V Yu, Glinushkin, A P, Bairamov, B H

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Toward new opportunities in the study of the biological potential of plants by Yu Rud, V, Kosolapov, V M, Hogland, W, Savchenko, I V, Diuldin, M V, Bairamov, B H, Terukov, E I, Switala, F

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Resonant Light Scattering by Optical Phonons in a Homoepitxial n-GaP Nanolayer Grown on a by Bairamov, B. H

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Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution by Holmi, J.T., Bairamov, B.H., Suihkonen, S., Lipsanen, H.

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Emergence of Chalcopyrites as Nonlinear Optical Materials by Ohmer, Melvin C., Pandey, Ravindra

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Acoustical plasma oscillations in photoexcited electron-hole plasma induced in GaAs layers embedded with InAs quantum dots by Bairamov, B H, Voitenko, V A, Toporov, V V, Zakharchenya, B P, Henini, M, Kent, A J

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High power gain for stimulated Raman amplification in CuAlS2 by Bairamov, B. H., Aydinli, A., Bodnar’, I. V., Rud’, Yu. V., Nogoduyko, V. K., Toporov, V. V.

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Raman scattering lineshapes in GaAs and InP by Kernohan, E.T.M., Phillips, R.T., Bairamov, B.H., Ritchie, D.A., Simmons, M.Y.

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Properties of Dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2 by Bairamov, B.H., Rud', V.Yu, Rud', Yu.V.

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Identifying threading dislocation types in ammonothermally grown bulk a-GaN by confocal Raman 3-D imaging of volumetric stress distribution by Holmi, JT, Bairamov, BH, Suihkonen, S, Lipsanen, H

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Resonant inelastic light scattering and photoluminescence in isolated nc-Si/SiO2 quantum dots by Bairamov, F. B., Toporov, V. V., Poloskin, E. D., Bairamov, H., Röder, C., Sprung, C., Bohmhammel, K., Seidel, J., Irmer, G., Lashkul, A., Lähderanta, E., Song, Y. W.

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Quasielastic Raman scattering in n-type GaAs by Paetzold, O, Irmer, G, Monecke, J, Toporov, V V, Bairamov, B H

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Determination of the hole concentration and mobility of p-GaP by Hall and by Raman measurements by Irmer, G, Siegel, W, Kuhnel, G, Monecke, J, Yasuoka, F M M, Bairamov, B H, Toporov, V V

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Functionalization of nc-Si/SiO2 semiconductor quantum dots by oligonucleotides by Bayramov, F. B., Poloskin, E. D., Kornev, A. A., Chernev, A. L., Toporov, V. V., Dubina, M. V., Röder, C., Sprung, C., Lipsanen, H., Bairamov, B. H.

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