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Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme
by
Aeschlimann, J.
,
Bani-Hashemian, M.H.
,
Ducry, F.
,
Emboras, A.
,
Luisier, M.
Published in
Solid-state electronics
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Solid-State Electronics
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Ab Initio Quantum Transport
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Amorphous Sio2
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Cbram
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Engineering
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Force-Field Molecular Dynamics
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Resistive Switching
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