Search Results - Baraskar, A.K

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  1. 1
    hbox\hbox\hbox Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

    hbox\hbox\hbox Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth by Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Thibeault, B.J., Gossard, A.C., Rodwell, M.J.W., Byungha Shin, Kim, E.J., McIntyre, P.C., Bo Yu, Yu Yuan, Wang, D., Yuan Taur, Asbeck, P., Yong-Ju Lee

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  2. 2
    [Formula Omitted] Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

    [Formula Omitted] Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth by Singisetti, U, Wistey, M.A, Burek, G.J, Baraskar, A.K, Thibeault, B.J, Gossard, A.C, Rodwell, M.J.W, Shin, Byungha, Kim, E.J, McIntyre, P.C, Yu, Bo, Yuan, Yu, Wang, D, Taur, Yuan, Asbeck, P, Lee, Yong-Ju

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  3. 3
    Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth

    Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth by Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Cagnon, J., Thibeault, B., Gossard, A.C., Stemmer, S., Rodwell, M.J.W., Eunji Kim, Byungha Shin, McIntyre, P.C., Yong-Ju Lee

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    Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs

    Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs by Jain, V., Baraskar, A.K., Wistey, M.A., Singisetti, U., Griffith, Z., Lobisser, E., Thibeault, B.J., Gossard, A.C., Rodwell, M.

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