Search Results - Baraskar, A.K.

  • Showing 1 - 4 results of 4
Refine Results
  1. 1
    hbox\hbox\hbox Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

    hbox\hbox\hbox Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth by Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Thibeault, B.J., Gossard, A.C., Rodwell, M.J.W., Byungha Shin, Kim, E.J., McIntyre, P.C., Bo Yu, Yu Yuan, Wang, D., Yuan Taur, Asbeck, P., Yong-Ju Lee

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  2. 2
    [Formula Omitted] Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

    [Formula Omitted] Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth by Singisetti, U, Wistey, M.A, Burek, G.J, Baraskar, A.K, Thibeault, B.J, Gossard, A.C, Rodwell, M.J.W, Shin, Byungha, Kim, E.J, McIntyre, P.C, Yu, Bo, Yuan, Yu, Wang, D, Taur, Yuan, Asbeck, P, Lee, Yong-Ju

    Get full text
    Article
    Save to List
    Saved in:
  3. 3
    Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth

    Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth by Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Cagnon, J., Thibeault, B., Gossard, A.C., Stemmer, S., Rodwell, M.J.W., Eunji Kim, Byungha Shin, McIntyre, P.C., Yong-Ju Lee

    Request full text
    Conference Proceeding
    Save to List
    Saved in:
  4. 4
    Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs

    Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs by Jain, V., Baraskar, A.K., Wistey, M.A., Singisetti, U., Griffith, Z., Lobisser, E., Thibeault, B.J., Gossard, A.C., Rodwell, M.

    Request full text
    Conference Proceeding
    Save to List
    Saved in:

Search Tools: