Search Results - Barhate, Viral

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  1. 1
    Post-deposition-annealed lanthanum-doped cerium oxide thin films: structural and electrical properties

    Post-deposition-annealed lanthanum-doped cerium oxide thin films: structural and electrical properties by Barhate, Viral Nivritti, Agrawal, Khushabu Santosh, Patil, Vilas Sidhhanath, Mahajan, Ashok Mahadu

    Published in Rare metals
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  2. 2
    The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors

    The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors by Patil, Sumit R., Barhate, Viral N., Patil, Vilas S., Agrawal, Khushabu S., Mahajan, Ashok M.

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  3. 3
    Plasma-enhanced atomic layer-deposited La2O3 ultra-thin films on Si and 6H–SiC: a comparative study

    Plasma-enhanced atomic layer-deposited La2O3 ultra-thin films on Si and 6H–SiC: a comparative study by Agrawal, Khushabu S., Barhate, Viral N., Patil, Vilas S., Patil, Lalit S., Mahajan, A. M.

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  4. 4
    XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films

    XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films by Patil, Vilas, Agrawal, Khushabu, Barhate, Viral, Patil, Sumit, Mahajan, Ashok

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  5. 5
    XPS study of homemade plasma enhanced atomic layer deposited La 2 O 3 /ZrO 2 bilayer thin films

    XPS study of homemade plasma enhanced atomic layer deposited La 2 O 3 /ZrO 2 bilayer thin films by Patil, Vilas, Agrawal, Khushabu, Barhate, Viral, Patil, Sumit, Mahajan, Ashok

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  6. 6
    Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer

    Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer by Barhate, Viral N., Agrawal, Khushabu S., Patil, Vilas S., Patil, Sumit R., Mahajan, Ashok M.

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  7. 7
    Temperature-dependent study of slow traps generation mechanism in HfO2/GeON/Ge(1 1 0) metal oxide semiconductor devices

    Temperature-dependent study of slow traps generation mechanism in HfO2/GeON/Ge(1 1 0) metal oxide semiconductor devices by Agrawal, Khushabu, Patil, Vilas, Barhate, Viral, Yoon, Geonju, Lee, Youn-Jung, Mahajan, Ashok, Yi, Junsin

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