Search Results - Becu, Stéphane

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  1. 1
    Impact of the Recessed Gate Depth on the GaN MIS-HEMT Performances: New Insights on Mobility Extraction

    Impact of the Recessed Gate Depth on the GaN MIS-HEMT Performances: New Insights on Mobility Extraction by Piotrowicz, Clémentine, Mohamad, Blend, Malbert, Nathalie, Becu, Stéphane, Ruel, Simon, Le Royer, Cyrille

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  2. 2
    Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V TH

    Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage... by Vauche, Laura, Chanuel, Antoine, Martinez, Eugénie, Roure, Marie-Christine, Le Royer, Cyrille, Bécu, Stéphane, Gwoziecki, Romain, Plissonnier, Marc

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  3. 3
    Study of an Al 2 O 3 /GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V TH

    Study of an Al 2 O 3 /GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Vol... by Vauche, Laura, Chanuel, Antoine, Martinez, Eugénie, Roure, Marie-Christine, Le Royer, Cyrille, Bécu, Stéphane, Gwoziecki, Romain, Plissonnier, Marc

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  4. 4
    Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage VTH

    Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage... by Vauche, Laura, Chanuel, Antoine, Martinez, Eugénie, Roure, Marie-Christine, Le Royer, Cyrille, Bécu, Stéphane, Gwoziecki, Romain, Plissonnier, Marc

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  5. 5
    Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides

    Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides by Bécu, Stéphane, Crémer, Sébastien, Autran, Jean-Luc

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  6. 6
    3D Suspended Nanowires Integration for CMOS and Beyond

    3D Suspended Nanowires Integration for CMOS and Beyond by Ernst, Thomas, Tachi, Kiichi, Hubert, Alexandre, Saracco, Emeline, Dupré, Cécilia, Bécu, Stéphane, Vulliet, Nathalie, Bernard, Emilie, Cherns, Peter, Maffini-Alvaro, Virginie, Damlencourt, Jean-François, Vizioz, Christian, Colonna, Jean-Philippe, Bonafos, Caroline, Hartmann, Jean-Michel

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  7. 7
    Advanced Substrates for GaN-Based Power Devices

    Advanced Substrates for GaN-Based Power Devices by Cibie, Anthony, Widiez, Julie, Escoffier, Rene, Blachier, Denis, Vladimirova, Kremena, Colonna, Jean-Philippe, Haumesser, Paul-Henri, Becu, Stephane, Coudrain, Perceval, Vandendaele, William, Biscarrat, Jerome, Gillot, Charlotte, Charles, Matthew, Di Cioccio, Lea

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  8. 8
    Oxidation of Suspended Stacked Silicon Nanowire for Sub-10nm Cross-Section Shape Optimization

    Oxidation of Suspended Stacked Silicon Nanowire for Sub-10nm Cross-Section Shape Optimization by Hubert, Alexandre, Colonna, Jean-Philippe, Bécu, Stéphane, Dupré, Cécilia, Maffini-Alvaro, Virginie, Hartmann, Jean-Michel, Pauliac, Sébastien, Vizioz, Christian, Aussenac, François, Carabasse, Catherine, Delaye, Vincent, Ernst, Thomas, Deleonibus, Simon

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  9. 9
    Restriction fragment length polymorphisms of virulence plasmids in Rhodococcus equi

    Restriction fragment length polymorphisms of virulence plasmids in Rhodococcus equi by Takai, S, Shoda, M, Sasaki, Y, Tsubaki, S, Fortier, G, Pronost, S, Rahal, K, Becu, T, Begg, A, Browning, G

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