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Search Results - Bensaoula, A.H
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Growth of InAs/InP and InAsP/InP heterostructures by chemical beam epitaxy
by
Freundlich, A.
,
Bensaoula, A.H.
,
Bensaoula, A.
Published in
Journal of crystal growth
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Strain balanced GaP/GaAs/InP/GaAs superlattices: structural and electronic properties
by
Bensaoula, A.H.
,
Freundlich, A.
Published in
Journal of crystal growth
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Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1
by
Bensaoula, A.H.
,
Rusakova, I.
,
Bensaoula, A.
Published in
Microelectronics
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Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 2
by
Rusakova, I.A
,
Bensaoula, A.H
,
Fartassi, A
,
Bensaoula, A
Published in
Microelectronics
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Influence of growth interruptions on the interface properties of InAs/sub x/P/sub 1-x//InP heterostructures grown by chemical beam epitaxy
by
Rossignol, V.
,
Bensaoula, A.
,
Freundlich, A.
,
Bensaoula, A.H.
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InP/GaAs/GaP/GaAs short period superlattices grown by chemical beam epitaxy
by
Freundlich, A.
,
Bensaoula, A.H.
,
Bensaoula, A.
,
Rossignol, V.
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Structural and optical properties of strain balanced InP/GaAs/GaP/GaAs superlattices
by
Bensaoula, A.H.
,
Freundlich, A.
,
Rossignol, V.
,
Bensaoula, A.
,
Neu, G.
,
Ponchet, A.
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