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Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates
by
Alshahed, Muhammad
,
Heuken, Lars
,
Alomari, Mohammed
,
Cora, Ildiko
,
Toth, Lajos
,
Pecz, Bela
,
Wachter, Clemens
,
Bergunde, Thomas
,
Burghartz, Joachim N.
Published in
IEEE transactions on electron devices
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Temperature Dependent Vertical Conduction of GaN HEMT Structures on Silicon and Bulk GaN Substrates
by
Heuken, Lars
,
Alshahed, Muhammad
,
Ottaviani, Alessandro
,
Alomari, Mohammed
,
Heuken, Michael
,
Wächter, Clemens
,
Bergunde, Thomas
,
Cora, Ildikó
,
Tóth, Lajos
,
Pécz, Béla
,
Burghartz, Joachim N.
Published in
Physica status solidi. A, Applications and materials science
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Ieee Transactions On Electron Devices
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Physica Status Solidi. A, Applications And Materials Science
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Current Collapse
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Dislocation Density
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Electron Mobility
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Epitaxial Growth
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Epitaxial Layers
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Gallium Nitride
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Gan High Electron Mobility Transistor
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