Search Results - Besserour, Mohamed Akram

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    A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications

    A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications by Douzi, Chawki, Kadi, Moncef, Dherbecourt, Pascal, Besserour, Mohamed Akram, Joubert, Eric, Fouquet, François

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  2. 2
    Thermal Modelling for an Electrothermal Model of GaN Devices

    Thermal Modelling for an Electrothermal Model of GaN Devices by Besserour, Mohamed Akram, Eloued, Sonia, Hadj Slama, Jaleleddine Ben, Fouquet, Francois, Kadi, Moncef

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