Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate by Bessolov, V.N., Karpov, D.V., Konenkova, E.V., Lipovskii, A.А., Osipov, A.V., Redkov, A.V., Soshnikov, I.P., Kukushkin, S.A.

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Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates by Kukushkin, S. A., Osipov, A. V., Bessolov, V. N., Konenkova, E. V., Panteleev, V. N.

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Effect of the n- and p-type Si substrates with a sic buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN by Bessolov, V.N, Grashchenko, A.S, Konenkova, E.V, Myasoedov, A.V, Osipov, A.V, Redkov, A.V, Rodin, S.N, Rubetsr, V.P, Kukushkin, S.A

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Raman scattering from LO–phonon–plasmon coupled modes in Ag-coated GaN nanocrystals by Bessolov, V.N., Konenkova, E.V., Zhilyaev, Yu.V., Paez Sierra, B.A., Zahn, D.R.T.

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Sulphide passivation of GaAs: study of surface band bending by Berkovits, V.L., Bessolov, V.N., L'vova, T.V., Makarenko, I.V., Safarov, V.I., Tsarenkov, B.V.

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