New minimal bounds for the derivatives of rational BACOzier paths and rational rectangular BACOzier surfaces by Bez, HE, Bez, N

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Investigation on multiple activation energy of retention in charge trapping memory using self-consistent simulation by Sangyong Park, Seongwook Choi, Kwang Sun Jun, HuiJung Kim, SungMan Rhee, Young June Park

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A practical adaptive approach for dynamic background subtraction using an invariant colour model and object tracking by Shoushtarian, Bijan, Bez, Helmut E.

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Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies by Bao, T. Huynh, Yakimets, D., Ryckaert, J., Ciofi, I., Baert, R., Veloso, A., Boemmels, J., Collaert, N., Roussel, P., Demuynck, S., Raghavan, P., Mercha, A., Tokei, Z., Verkest, D., Thean, A. V-Y, Wambacq, P.

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On the Use of EEG or MEG Brain Imaging Tools in Neuromarketing Research by Astolfi, Laura, Vecchiato, Giovanni, De Vico Fallani, Fabrizio, Toppi, Jlenia, Aloise, Fabio, Bez, Francesco, Wei, Daming, Kong, Wanzeng, Dai, Jounging, Cincotti, Febo, Mattia, Donatella, Babiloni, Fabio

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A Practical Catalyst-Free Synthesis of 6-Amino-4 Alkyl/Aryl-3-methyl-2,4-dihydropyrano[2,3-c]pyrazole-carbonitrile in Aqueous Medium by Bihani, Manisha, Bora, Pranjal P., Bez, Ghanashyam

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Generalized invariant-geometry conditions for the rational Bézier paths by Bez, H. E.

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Generating Maude Specifications from M-UML Statechart Diagrams by Kezai, Mourad, Khababa, Abdallah

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Flexible thermoelectric generator based on transfer printed Si microwires by Khan, Saleem, Dahiya, R. S., Lorenzelli, L.

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Variability in device degradations: Statistical observation of NBTI for 3996 transistors by Awano, Hiromitsu, Hiromoto, Masayuki, Sato, Takashi

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A 9.8 μm sample and hold time to amplitude converter CMOS SPAD pixel by Parmesan, Luca, Dutton, Neale A. W., Calder, Neil J., Holmes, Andrew J., Grant, Lindsay A., Henderson, Robert K.

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Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS by Puglisi, F. M., Pavan, P., Larcher, L., Padovani, A.

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Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs by Andrieu, F., Casse, M., Baylac, E., Perreau, P., Nier, O., Rideau, D., Berthelon, R., Pourchon, F., Pofelski, A., De Salvo, B., Gallon, C., Mazzocchi, V., Barge, D., Gaumer, C., Gourhant, O., Cros, A., Barral, V., Ranica, R., Planes, N., Schwarzenbach, W., Richard, E., Josse, E., Weber, O., Arnaud, F., Vinet, M., Faynot, O., Haond, M.

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Flexible and stretchable electronics for wearable healthcare by van den Brand, Jeroen, de Kok, Margreet, Sridhar, Ashok, Cauwe, Maarten, Verplancke, Rik, Bossuyt, Frederick, de Baets, Johan, Vanfleteren, Jan

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FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration by Fenouillet-Beranger, C., Previtali, B., Batude, P., Nemouchi, F., Casse, M., Garros, X., Tosti, L., Rambal, N., Lafond, D., Dansas, H., Pasini, L., Brunet, L., Deprat, F., Gregoire, M., Mellier, M., Vinet, M.

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Hybrid Systems in foil (HySiF) exploiting ultra-thin flexible chips by Harendt, Christine, Zili Yu, Burghartz, Joachim N., Kostelnik, Jan, Kugler, Andreas, Saller, Stefan

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Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory by Kyunghwan Lee, Duckseoung Kang, Hyungcheol Shin, Sangjin Kwon, Shinhyung Kim, Yuchul Hwang

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Synthesis of Polyfunctionalized 4H-Pyrans by Bihani, Manisha, Bora, Pranjal P., Bez, Ghanashyam

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Impact of Off State Stress on advanced high-K metal gate NMOSFETs by Spessot, Alessio, Aoulaiche, Marc, Moonju Cho, Franco, Jacopo, Schram, Tom, Ritzenthaler, Romain, Kaczer, Ben

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Silicon LEDs in FinFET technology by Piccolo, G., Kuindersma, P. I., Ragnarsson, L.-A, Hueting, R. J. E., Collaert, N., Schmitz, J.

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