Understanding Langmuir probe characteristics of a magnetized plasma column in partial contact with grounded probe reference by Bhuva, M.P., Karkari, S.K., Kumar, S.

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Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing by Amusan, O.A., Massengill, L.W., Baze, M.P., Bhuva, B.L., Witulski, A.F., DasGupta, S., Sternberg, A.L., Fleming, P.R., Heath, C.C., Alles, M.L.

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HBD layout isolation techniques for multiple node charge collection mitigation by Black, J.D., Sternberg, A.L., Alles, M.L., Witulski, A.F., Bhuva, B.L., Massengill, L.W., Benedetto, J.M., Baze, M.P., Wert, J.L., Hubert, M.G.

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Pulsed Laser Single-Event Effects in Highly Scaled CMOS Technologies in the Presence of Dense Metal Coverage by Balasubramanian, A., McMorrow, D., Nation, S.A., Bhuva, B.L., Reed, R.A., Massengill, L.W., Loveless, T.D., Amusan, O.A., Black, J.D., Melinger, J.S., Baze, M.P., Ferlet-Cavrois, V., Gaillardin, M., Schwank, J.R.

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Effect of Total Ionizing Dose on a Bulk 130 nm Ring Oscillator Operating at Ultra-Low Power by Casey, M.C., Armstrong, S.E., Arora, R., King, M.P., Ahlbin, J.R., Francis, S.A., Bhuva, B.L., McMorrow, D., Hughes, H.L., McMarr, P.J., Melinger, J.S., Massengill, L.W.

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Single Event Upsets in a 130 nm Hardened Latch Design Due to Charge Sharing by Amusan, O.A., Stemberg, A.L., Witulski, A.F., Bhuva, B.L., Black, J.D., Baze, M.P., Massengill, L.W.

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Mitigation techniques for single event induced charge sharing in a 90 nm bulk CMOS process by Amusan, O.A., Massengill, L.W., Baze, M.P., Bhuva, B.L., Witulski, A.F., Black, J.D., Balasubramanian, A., Casey, M.C., Black, D.A., Ahlbin, J.R., Reed, R.A., McCurdy, M.W.

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Comparison of forming gas, nitrogen, and vacuum anneal effects on X-ray irradiated MOSFETs by Pagey, M.P., Milanowski, R.J., Henegar, K.T., Bhuva, B.L., Kerns, S.E.

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Combined effect of X-irradiation and forming gas anneal on the hot-carrier response of MOS oxides by Milanowski, R.J., Pagey, M.P., Matta, A.I., Bhuva, B.L., Massengill, L.W., Kerns, S.E.

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Single Event Upsets in Deep-Submicrometer Technologies Due to Charge Sharing by Amusan, O.A., Massengill, L.W., Baze, M.P., Sternberg, A.L., Witulski, A.F., Bhuva, B.L., Black, J.D.

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Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS Process by Amusan, O.A., Massengill, L.W., Baze, M.P., Bhuva, B.L., Witulski, A.F., Black, J.D., Balasubramanian, A., Casey, M.C., Black, D.A., Ahlbin, J.R., Reed, R.A., McCurdy, M.W.

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