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    Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications

    Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications by Pa ebutas, Vaidas, Urbanowicz, Andrzej, Cic nas, Paulius, Stanionyt, Sandra, Bi i nas, Andrius, Nevinskas, Ignas, Krotkus, Ar nas

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