A Physics-based Model for Negative Tone Development Materials by Fang, Chao, Smith, Mark D., Robertson, Stewart, Biafore, John J., Pret, Alessandro Vaglio

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Pursuit of Lower Critical Dimensional Uniformity in EUV Resists by Thackeray, James, Cameron, James, Jain, Vipul, LaBeaume, Paul, Coley, Suzanne, Ongayi, Owendi, Wagner, Mike, Rachford, Aaron, Biafore, John

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Progress Towards Production Worthy EUV Photoresists: Balancing Litho, Outgassing and OOB Performance by Cameron, James, Thackeray, James, Jain, Vipul, LaBeaume, Paul, Coley, Suzanne, Ongayi, Owendi, Wagner, Mike, Biafore, John

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Mask Effects on Resist Variability in Extreme Ultraviolet Lithography by Pret, Alessandro Vaglio, Gronheid, Roel, Engelen, Jan, Yan, Pei-Yang, Leeson, Michael J, Younkin, Todd R, Garidis, Konstantinos, Biafore, John

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Understanding the Role of Acid vs. Electron Blur in EUV Resist Materials by Thackeray, James W., Wagner, Mike, Kang, Su Jun, Biafore, John

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Advances in Low Diffusion EUV Resists by Thackeray, James W., Cameron, James F., Wagner, Michael, Coley, Suzanne, Labeaume, Vipu Paul, Ongayi, Owndi, Montgomery, Warren, Lovell, Dave, Biafore, John, Chakrapane, Vidhya, Ko, Akiteru

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Stochastic exposure kinetics of extreme ultraviolet photoresists: Trapping model by Mack, Chris A., Biafore, John J., Smith, Mark D.

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Progress Towards Production Worthy EUV Photoresists by Cameron, James, Thackeray, James, Jain, Vipul, LaBeaume, Paul, Coley, Suzanne, Ongayi, Owendi, Wagner, Mike, Biafore, John

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ANTI-REFLECTIVE POLYMER COATINGS IN OPTICAL MICROLITHOGRAPHY by De, Binod, Malik, Sanjay, Dilocker, Stephanie, Spaziano, Gregory, Biafore, John, Bowden, Murrae

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Design Considerations for Anti-reflection Layer in Thin Imaging System by Malik, Sanjay, De, Binod, Biafore, John, Spaziano, Greg, Sarubbi, Tom, Dilocker, Stephanie, Bowden, Murrae, Reybrouc, Mario, Grozev, Grozdan, Driessche, Veerle van, Tzviatkov, Plamen

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Advances in Resist Materials for 193nm Lithography by Bowden, Murrae J., Gabor, Allen H., Dimov, Ognian, Medina, Arturo N., Foster, Patrick, Steinhäusler, Thomas, Biafore, John J., Spaziano, Gregory, Slater, Sydney G., Blakeney, Andrew J., Neisser, Mark O., Houlihan, Frank M., Cirelli, Ray A., Dabbagh, Gary, Hutton, Richard S., Rushkin, Ilya L., Sweeney, James R., Timko, Allen G., Nalamasu, Om, Reichmanis, Elsa

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Advances in Resist Materials for 193 nm Lithography by Bowden, Murrae J., Gabor, Allen H., Dimov, Ognian, Medina, Arturo N., Foster, Patrick, Steinhäusler, Thomas, Biafore, John J., Spaziano, Gregory, Slater, Sydney G., Blakeney, Andrew J., Neisser, Mark O., Houlihan, Frank M., Cirelli, Ray A., Dabbagh, Gary, Hutton, Richard S., Rushkin, Ilya L., Sweeney, James R., Timko, Allen G., Nalamasu, Om, Reichmanis, Elsa

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