Terahertz pulse emission from GaInAsBi by Pačebutas, V., Stanionytė, S., Norkus, R., Bičiūnas, A., Urbanowicz, A., Krotkus, A.

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Band-pass filters for THz spectral range fabricated by laser ablation by Voisiat, B., Bičiūnas, A., Kašalynas, I., Račiukaitis, G.

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Physical mechanisms of terahertz pulse emission from photoexcited surfaces of tellurium crystals by Bičiūnas, A., Arlauskas, A., Adamonis, J., Cicėnas, P., Krotkus, A.

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Terahertz time-domain-spectroscopy system based on femtosecond Yb:fiber laser and GaBiAs photoconducting components by Pačebutas, V., Bičiūnas, A., Balakauskas, S., Krotkus, A., Andriukaitis, G., Lorenc, D., Pugžlys, A., Baltuška, A.

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THz pulse emission from InAs-based epitaxial structures grown on InP substrates by Nevinskas, I, Butkut, R, Stanionyt, S, Bi i nas, A, Gei utis, A, Krotkus, A

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Terahertz time-domain-spectroscopy system using a 1 micron wavelength laser and photoconductive components made from low-temperature-grown GaAs by Bičiūnas, A., Adamonis, J., Krotkus, A.

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Terahertz pulse emission from semiconductor surfaces illuminated by femtosecond Yb:KGW laser pulses by Bičiūnas, A., Pačebutas, V., Krotkus, A.

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Terahertz emission from femtosecond laser illuminated (112) surfaces of InSb by Malevich, V. L., Krotkus, A., Bičiūnas, A., Pačebutas, V.

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Impact of a superlattice on electrical properties of AlGaN GaN sapphire 2DEG structures by Jakštas, V, Janonis, V, Bi i nas, A, Aleksiej nas, R, Kadys, A, Malinauskas, T, Kašalynas, I

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Terahertz Pulse Emission from Nanostructured (311) Surfaces of GaAs by Adomavičius, R., Adamonis, J., Bičiūnas, A., Krotkus, A., Atrashchenko, A., Evtikhiev, V., Ulin, V., Kaliteevski, M., Abram, R.

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Terahertz polarimetric emission and detection using a cubic crystal by Gaborit, G., Bernier, M., Biciunas, A., Coutaz, J.-L

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Impact of thermal treatments on epitaxial Ga.sub.yIn.sub.1-yAs.sub.1-xBi.sub.x layers luminescent properties by StanionytÄ, S, Pacebutas, V, Cechavicius, B, Biciunas, A, Geizutis, A, Bukauskas, V, ButkutÄ, R

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Polarization selective dual frequency metasurface-based resonant thermal terahertz emitters on n-GaAs/GaAs by Cizas, V., Grigelionis, I., Ikamas, K., Jakstas, V., Skelaite, B., Jokubauskis, D., Biciunas, A., Urbanowicz, A., Treideris, M., Butkute, R., Minkevicius, L.

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Resonant thermal terahertz metasurface-based emitters on n-GaAs/GaAs by Cizas, V., Grigelionis, I., Ikamas, K., Jakstas, V., Jokubauskis, D., Biciunas, A., Urbanowicz, A., Treideris, M., Butkute, R., Minkevicius, L.

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Band-pass filters for THz spectral range fabricated by laser ablation: Photo-excited Processes and Applications by VOISIAT, B, BICIUNAS, A, KASALYNAS, I, RACIUKAITIS, G

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Impact of thermal treatments on epitaxial GayIn1−yAs1−xBix layers luminescent properties by Stanionytė, S., Pačebutas, V., Čechavičius, B., Bičiūnas, A., Geižutis, A., Bukauskas, V., Butkutė, R., Krotkus, A.

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THz spectroscopy of the ammonothermal p-type GaN substrate with and without AlGaN/GaN epilayers by Kasalynas, I., Biciunas, A., Adomavicius, R., Krotkus, A., Prystawko, P., Leszczynski, M., Dwilinski, R.

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Impact of thermal treatments on epitaxial GayIn1−yAs1−xBi x layers luminescent properties by Stanionytė, S., Pačebutas, V., Čechavičius, B., Bičiūnas, A., Geižutis, A., Bukauskas, V., Butkutė, R., Krotkus, A.

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Impact of thermal treatments on epitaxial GayIn1−y As1−x Bi x layers luminescent properties by Stanionytė, S, Pačebutas, V, Čechavičius, B, Bičiūnas, A, Geižutis, A, Bukauskas, V, Butkutė, R, Krotkus, A

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Fabrication of resonant THz mesh filters employing ultrashort-pulse UV laser radiation by Kašalynas, I, Valušis, G, Voisiat, B, Račiukaitis, G, Minkevičius, L, Tamošiũnas, V, Bičiũnas, A, Krotkus, A

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