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Effect of Source Field Plate Cracks on the Electrical Performance of AlGaN/GaN HEMT Devices
by
Bie, Ye-Nan
,
Du, Cheng-Lin
,
Cai, Xiao-Long
,
Ye, Ran
,
Liu, Hai-Jun
,
Zhang, Yu
,
Duan, Xiang-Yang
,
Zhu, Jie-Jie
Published in
Crystals (Basel)
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Crystals
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Algan/Gan Hemts
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Aluminum Gallium Nitrides
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Bevels
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Breakdown
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Cracks
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Crystallography
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Design Optimization
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Electric Fields
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Electrical Performance
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Electrodes
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Failure Analysis
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Gallium Nitrides
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Gan Tcad Modeling
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High Electron Mobility Transistors
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Materials Science
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Materials Science, Multidisciplinary
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