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Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components
by
Ottaviani, A.
,
Palacios, P.
,
Zweipfennig, T.
,
Alomari, M.
,
Beckmann, C.
,
Bierbusse, D.
,
Wieben, J.
,
Ehrler, J.
,
Kalisch, H.
,
Negra, R.
,
Vescan, A.
,
Burghartz, J. N.
Published in
IEEE transactions on electron devices
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Ieee Transactions On Electron Devices
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Algan/Gan
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Capacitors
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Current Leakage
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Engineering
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Engineering, Electrical & Electronic
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Frequency Measurement
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Gallium Nitrides
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Hemts
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High Electron Mobility Transistors
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High Temperature
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High-Electron Mobility Transistor
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Inductors
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Metal-Insulator-Metal Capacitors
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Metals
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Metal–Insulator–Metal Capacitors
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Modfets
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Oscillator
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Performance Evaluation
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Physical Sciences
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