Search Results - Bilbao, Argenis V.

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  1. 1
    Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions

    Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions by Schrock, James A., Pushpakaran, Bejoy N., Bilbao, Argenis V., Ray, William B., Hirsch, Emily A., Kelley, Mitchell D., Holt, Shad L., Bayne, Stephen B.

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  2. 2
    Development and testing of an active high voltage saturation probe for characterization of ultra-high voltage silicon carbide semiconductor devices

    Development and testing of an active high voltage saturation probe for characterization of ultra-high voltage silicon carbide semiconductor devices by Bilbao, Argenis V, Schrock, James A, Ray, 2nd, William B, Kelley, Mitchell D, Holt, Shad L, Giesselmann, Michael G, Bayne, Stephen B

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  3. 3
    Machine Learning Based Foreign Object Detection in Wireless Power Transfer Systems

    Machine Learning Based Foreign Object Detection in Wireless Power Transfer Systems by Graves, David Z., Bilbao, Argenis V., Bayne, Stephen B.

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  4. 4
    Safe and Intelligent Wireless Power Transfer System

    Safe and Intelligent Wireless Power Transfer System by Graves, David Z., Bilbao, Argenis V., Bayne, Stephen B.

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  5. 5
    Modeling of a SiC Drift Step Recovery Diode Stack in Silvaco Atlas

    Modeling of a SiC Drift Step Recovery Diode Stack in Silvaco Atlas by Graves, David Z., Bilbao, Argenis V., Bayne, Stephen B., Schrock, Emily A., Miller, Seth, Phillips, James

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  6. 6
    Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET

    Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET by Kelley, Mitchell D., Pushpakaran, Bejoy N., Bilbao, Argenis V., Schrock, James A., Bayne, Stephen B.

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  7. 7
    Failure Modes of 15-kV SiC SGTO Thyristors During Repetitive Extreme Pulsed Overcurrent Conditions

    Failure Modes of 15-kV SiC SGTO Thyristors During Repetitive Extreme Pulsed Overcurrent Conditions by Schrock, James A., Hirsch, Emily A., Lacouture, Shelby, Kelley, Mitchell D., Bilbao, Argenis V., Ray, William B., Bayne, Stephen B., Giesselmann, Michael, O'Brien, Heather, Ogunniyi, Aderinto

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  8. 8
    Analysis of GaN power MOSFET exporsure to pulsed overcurrents

    Analysis of GaN power MOSFET exporsure to pulsed overcurrents by Ray, William B., Schrock, James A., Bilbao, Argenis V., Kelley, Mitchell, Lacouture, Shelby, Hirsch, Emily, Bayne, Stephen B.

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  9. 9
    Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests

    Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests by Bilbao, Argenis V., Schrock, James A., Ray, William B., Kelley, Mitchell D., Bayne, Stephen B.

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  10. 10
    Evaluation and comparison of 1200-V/285-A silicon carbide half-bridge MOSFET modules

    Evaluation and comparison of 1200-V/285-A silicon carbide half-bridge MOSFET modules by Kelley, Mitchell D., Bilbao, Argenis V., Ray, William B., Schrock, James A., Bayne, Stephen B.

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  11. 11
    Maximum Power Point Tracking of Inductive Resonant Wireless Power Transfer Systems Using a Buck Converter on the Receiving Side to Mitigate the Effects of Coil Misalignment

    Maximum Power Point Tracking of Inductive Resonant Wireless Power Transfer Systems Using a Buck Converter on the Receiving Side to Mitigate the Effects of Coil Misalignment by Bilbao, Argenis V., Bayne, Stephen B.

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