Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices by Pasquariello, D., Bjorlin, E.S., Lasaosa, D., Chiu, Yi.-J., Piprek, J., Bowers, J.E.

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Temperature dependence of the relaxation resonance frequency of long-wavelength vertical-cavity lasers by Bjorlin, E.S., Geske, J., Mehta, M., Piprek, J., Bowers, J.E.

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MEMS-tunable vertical-cavity SOAs by Cole, G.D., Bjorlin, E.S., Qi Chen, Chung-Yeung Chan, Shaomin Wu, Wang, C.S., MacDonald, N.C., Bowers, J.E.

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Carrier-confined vertical-cavity semiconductor optical amplifiers for higher gain and efficiency by Bjorlin, E.S., Kimura, T., Bowers, J.E.

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Widely tunable bottom-emitting vertical-cavity SOAs by Cole, G.D., Bjorlin, E.S., Wang, C.S., MacDonald, N.C., Bowers, J.E.

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Long wavelength vertical-cavity semiconductor optical amplifiers by Bjorlin, E.S., Riou, B., Abraham, P., Piprek, J., Chiu, Y.-Y., Black, K.A., Keating, A., Bowers, J.E.

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First demonstration of a MEMS tunable vertical-cavity SOA by Qi Chen, Cole, G.D., Bjorlin, E.S., Kimura, T., Shaomin Wu, Wang, C.S., MacDonald, N.C., Bowers, J.E.

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Small-signal frequency response of long-wavelength vertical-cavity lasers by Black, K.A., Bjorlin, E.S., Piprek, J., Hu, E.L., Bowers, J.E.

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Stable polarization operation of 1.3-/spl mu/m wavelength vertical-cavity surface-emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding by Okuno, Y.L., Gan, K.-G., Chou, H.-F., Chiu, Y.-J., Wang, C.S., Wu, S., Geske, J., Bjorlin, E.S., Bowers, J.E.

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Stable polarization operation of 1.3-[micro]m wavelength vertical-cavity surface-emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding by Okuno, Y.L, Gan, K.-G, Chou, H.-F, Chiu, Y.-J, Wang, C.S, Wu, S, Geske, J, Bjorlin, E.S, Bowers, J.E

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1.3-μm vertical-cavity amplifier by Bjorlin, E.S., Riou, B., Keating, A., Abraham, P., Chiu, Y.-J., Piprek, J., Bowers, J.E.

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Vertical-cavity amplifying modulator at 1.3 μm by Bjorlin, E.S., Dahl, A., Piprek, J., Abraham, P., Chiu, Y.-J., Bowers, J.E.

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Vertical-cavity amplifying modulator at 1.3 [mu]m by Bjorlin, E.S, Dahl, A, Piprek, J, Abraham, P, Chiu, Y.-J, Bowers, J.E

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1.3-[mu]m vertical-cavity amplifier by Bjorlin, E.S, Riou, B, Keating, A, Abraham, P, Chiu, Y.-J, Piprek, J, Bowers, J.E

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Design and analysis of MEMS tunable vertical-cavity semiconductor optical amplifiers by Cole, G.D., Bjorlin, E.S., Chen, Q., Chan, C.-Y., Wu, S., Wang, C.S., Bowers, J.E., MacDonald, N.C.

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High gain, high efficiency vertical-cavity semiconductor optical amplifiers by Bjorlin, E.S., Abraham, P., Pasquariello, D., Piprek, J., Yi-Jen Chiu, Bowers, J.E.

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Microelectromechanical tunable long-wavelength vertical-cavity semiconductor optical amplifiers by Cole, G.D., Qi Chen, Bjorlin, E.S., Kimura, T., Shaomin Wu, Wang, C.S., Bowers, J.E., MacDonald, N.C.

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Calculated voltage characteristics for tunnel junctions in double cavity long-wavelength surface emitting lasers by Mehta, M., Bjorlin, E.S., Bowers, J.E.

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10 Gb/s optically preamplified receiver using a vertical-cavity amplifying optical filter by Bjorlin, E.S., Geske, J., Bowers, J.E.

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Optical gain-bandwidth product of vertical-cavity amplifiers by Piprek, J., Bjorlin, E.S., Bowers, J.E.

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