The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method by Massabuau, F.C.-P., Tartan, C.C., Traynier, R., Blenkhorn, W.E., Kappers, M.J., Dawson, P., Humphreys, C.J., Oliver, R.A.

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Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures by Blenkhorn, W E, Schulz, S, Tanner, D S P, Oliver, R A, Kappers, M J, Humphreys, C J, Dawson, P

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The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes by Oliver, R. A., Massabuau, F. C.-P., Kappers, M. J., Phillips, W. A., Thrush, E. J., Tartan, C. C., Blenkhorn, W. E., Badcock, T. J., Dawson, P., Hopkins, M. A., Allsopp, D. W. E., Humphreys, C. J.

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Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures by Massabuau, F. C.-P., Davies, M. J., Blenkhorn, W. E., Hammersley, S., Kappers, M. J., Humphreys, C. J., Dawson, P., Oliver, R. A.

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Stabilising liquid crystalline Blue Phases by Dierking, I, Blenkhorn, W, Credland, E, Drake, W, Kociuruba, R, Kayser, B, Michael, T

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