LNA Design with CMOS SOI Process-l.4dB NF K/Ka band LNA by Li, Chaojiang, El-Aassar, Omar, Kumar, Arvind, Boenke, Myra, Rebeiz, Gabriel M.

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2.4/5.5GHz LNA switch designs based on high resistive substrate 0.35um SiGe BiCMOS by Chaojiang Li, Xiaoxia Wang, Jain, Vibhor, Hanyi Ding, Boenke, Myra, Wang, Dawn, Wolf, Randy, Joseph, Alvin

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An integrated zigbee transmitter and DC-DC converter on 0.18μm HV RF CMOS technology by Chaojiang Li, Wang, Dawn, Boenke, Myra, Letavic, Ted, Cohn, John

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0.8dB IL 46dBm OIP3 Ka band SPDT for 5G communication by Li, Chaojiang, Ustundag, Berktug, Kumar, Arvind, Boenke, Myra, Kodak, Umut, Rebeiz, Gabriel

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1W < 0.9dB IL DC-20GHz T/R switch design with 45nm SOI process by Chaojiang Li, Freeman, Greg, Boenke, Myra, Cahoon, Ned, Kodak, Umut, Rebeiz, Gabriel

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High performance SOI RF switches for wireless applications by Dawn Wang, Wolf, R, Joseph, A, Botula, A, Rabbeni, P, Boenke, M, Harame, D, Dunn, J

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DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants by Boenke, M.M., Wu, M.C., Wang, S., Clark, W.M., Stevens, E.H., Utlaut, M.W.

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Prestimulus α/β power in temporal-order judgments: individuals differ in direction of modulation but show consistency over auditory and visual tasks by Boenke, Lars T, Zeghbib, Abdelhafid, Spiliopoulou, Myra, Alais, David, Ohl, Frank W

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