Search Results - Bolukbas, Basar

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  1. 1
    Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1−xN HEMT based on a grading AlxGa1−xN buffer layer

    Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1−xN HEMT based on a grading AlxGa1−xN buffer layer by Yu, Hongbo, Lisesivdin, Sefer B., Bolukbas, Basar, Kelekci, Ozgur, Ozturk, Mustafa Kemal, Ozcelik, Suleyman, Caliskan, Deniz, Ozturk, Mustafa, Cakmak, Huseyin, Demirel, Pakize, Ozbay, Ekmel

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  2. 2
    Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure

    Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure by Yu, Hongbo, Ozturk, Mustafa, Demirel, Pakize, Cakmak, Huseyin, Bolukbas, Basar, Caliskan, Deniz, Ozbay, Ekmel

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  3. 3
    Improvement of breakdown characteristics in AlGaN/GaN/Al x Ga 1− x N HEMT based on a grading Al x Ga 1− x N buffer layer

    Improvement of breakdown characteristics in AlGaN/GaN/Al x Ga 1− x N HEMT based on a grading Al x Ga 1− x N buffer layer by Yu, Hongbo, Lisesivdin, Sefer B., Bolukbas, Basar, Kelekci, Ozgur, Ozturk, Mustafa Kemal, Ozcelik, Suleyman, Caliskan, Deniz, Ozturk, Mustafa, Cakmak, Huseyin, Demirel, Pakize, Ozbay, Ekmel

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  4. 4
    Design of multi-octave band GaN-HEMT power amplifier

    Design of multi-octave band GaN-HEMT power amplifier by Eren, G., Sen, O. A., Bolukbas, B., Kurt, G., Arican, O., Cengiz, O., Unal, S. T. K., Durmus, Y., Ozbay, E.

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