Electrode with spatially combined heating zones for oncology therapy by Makarov, V.N., Boos, N.A.

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High radiation tolerance of InAs∕AlSb high-electron-mobility transistors by Weaver, B. D., Boos, J. B., Papanicolaou, N. A., Bennett, B. R., Park, D., Bass, R.

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Searches for anomalous coupling in top-quark interaction with the W boson and b quark, along with searches for quark-flavor-changing neutral currents, in an analysis of data from t... by Boos, E. E., Bunichev, V. E., Vorotnikov, G. A., Dudko, L. V., Myagkov, I. A., Perfilov, M. A., Popov, A. A., Tsirova, N. A., Shvetsov, I. A.

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Low-Frequency Noise in AlSb/InAs and Related HEMTs by Kruppa, Walter, Boos, J. Brad, Bennett, Brian R., Papanicolaou, Nicolas A., Park, Doewon, Bass, Robert

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Sb-based n- and p-channel HFETs for high-speed, low-power applications by Boos, J.B., Bennett, B.R., Papanicolaou, N.A., Ancona, M.G., Champlain, J.G., Park, D., Kruppa, W., Weaver, B.D., Bass, R., Shanabrook, B.V.

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Manufacturable tri-stack AlSb/INAS HEMT low-noise amplifiers using wafer-level-packaging technology for light-weight and ultralow-power applications by Chou, Y.C., Chang-Chien, P., Yang, J.M., Nishimoto, M.Y., Hennig, K., Lange, M.D., Zeng, X., Parlee, M.R., Lin, C.H., Lee, L.S., Nam, P.S., Wojtowicz, M., Barsky, M.E., Oki, A.K., Boos, J.B., Bennett, B.R., Papanicolaou, N.A.

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The effect of gate metals on manufacturability of 0.1 μm metamorphic AlSb/InAs HEMTs for ultralow-power applications by Chou, Y.C., Lee, L.J., Yang, J.M., Lange, M.D., Nam, P.S., Lin, C.H., Quach, H., Gutierrez, A.L., Barsky, M.E., Wojtowicz, M., Oki, A.K., Block, T.R., Boos, J.B., Bennett, B.R., Papanicolaou, N.A.

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0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications by Lin, C.H., Chou, Y.C., Lange, M.D., Yang, J.M., Nishimoto, M.Y., Lee, J., Nam, P.S., Boos, J.B., Bennett, B.R., Papanicolaou, N.A., Tsai, R.S., Gutierrez, A.L., Barsky, M.E., Chin, T.P., Wojtowicz, M., Lai, R., Oki, A.K.

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Interdigitated hetero InGaAs/GaAs n-i-p-i modulators by Tseng, W.F., Chandler-Horowitz, D., Papanicolaou, N.A., Boos, J.B.

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Planar fully ion implanted InP power junction FET's by Boos, J.B., Binari, S.C., Kelner, G., Thompson, P.E., Weng, T.H., Papanicolaou, N.A., Henry, R.L.

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The effectiveness of chromium and TiW as diffusion barriers for AuZn/Au contacts in InP junction field effect transistors by Boos, J.B., Kruppa, W., Papanicolaou, N.A.

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Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics by Tsai, R., Barsky, M., Boos, J.B., Bennett, B.R., Lee, J., Papanicolaou, N.A., Magno, R., Namba, C., Liu, P.H., Park, D., Grundbacher, R., Gutierrez, A.

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0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications by Chou, C., Lange, M.D., Bennett, B.R., Boos, J.B., Yang, J.M., Papanicolaou, N.A., Lin, C.H., Lee, L.J., Nam, P.S., Gutierrez, A.L., Farkas, D.S., Tsai, R.S., Wojtowicz, M., Chin, T.P., Oki, A.K.

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Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers by Anderson, G.W., Papanicolaou, N.A., Ma, D.I., Mack, I.A.G., Modolo, J.A., Kub, F.J., Young, C.W., Thompson, P.E., Boos, J.B.

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6.2 /spl Aring/ In/sub 0.2/Al/sub 0.8/Sb/InAs/sub 0.7/Sb/sub 0.3/ HEMTs for low voltage high-frequency applications by Papanicolaou, N.A., Tinkham, B.P., Boos, J.B., Bennett, B.R., Bass, R., Park, D.

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InAlAsSb/InGaSb double heterojunction bipolar transistor by Magno, R., Boos, J.B., Campbell, P.M., Bennett, B.R., Glaser, E.R., Ancona, M.G., Tinkham, B.P., Park, D., Papanicolaou, N.A., Ikossi, K., Shanabrook, B.V., Mohney, S.E.

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High speed, low power electronics using Sb-based semiconductors by Magno, R., Boos, J.B., Bennett, B.R., Ikossi, K., Glaser, E.R., Papanicolaou, N.A., Anconca, M.G., Tinkham, B.P., Kruppa, W., Park, D., Shanabrook, B.V., Mittereder, J., Chang, W., Hobart, K.D., Bass, R., Dietrich, H.B., Mohney, S.E., Wang, S., Robinson, J., Tsai, R., Barsky, M., Gutierrez, A.

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Single-particle inclusive spectra of charged particles in pp interactions at 22.4 GeV/c by Boos, E.G., Samojlov, V.V., Takibaev, Zh.S., Tashimov, M.A., Temiraliev, T., Batyunya, B.V., Boguslavsky, I.V., Buzdavina, N.A., Gramenitsky, I.M., Ivanov, V.G., Lednický, R., Tikhonova, L.A., Valkárová, A., Vrba, V., Zlatanov, Z., Ervanne, J., Ljung, S., Orava, R., Villanen, H., Villanen, P., Patočka, J., Korolev, B.V., Selektor, Ya.M., Shulyachenko, V.N., Turov, V.F., Dementiev, R.K., Leikin, E.M., Pavlova, A.G., Pozhidaeva, N.A., Rud, V.I., Rob, L., Žáček, J., Böhm, J., Chýla, J., Cvach, J., Herynek, I., Reimer, P., Sedlak, J., Šimák, V.

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Charge asymmetry at large pT in inelastic [formula omitted] reactions at 22.4 GeV/c by Boos, E.G., Filippova, V.V., Takibaev, Z.S., Temiraliev, T., Batyunya, B.V., Boguslavsky, I.V., Buzdavina, N.A., Gramenitsky, I.M., Ivanov, V.G., Lednicky, R., Tikhonova, L.A., Topuriya, T., Valkarova, A., Vrba, V., Zlatanov, Z., Ervanne, J., Ljung, S., Orava, R., Villanen, H., Villanen, P., Patočka, J., Dementev, R.K., Garanina, T.A., Leikin, E.M., Pozhidaeva, N.A., Rud, V.I., Rob, L., Žaček, J., Chýla, J., Cvach, J., Herynek, I., Reimer, P., Šimák, V.

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Single-particle inclusive spectra of charged particles in [formula omitted] interactions at 22.4 GeV/ c by Boos, E.G., Samojlov, V.V., Takibaev, Zh.S., Tashimov, M.A., Temiraliev, T., Batyunya, B.V., Boguslavsky, I.V., Buzdavina, N.A., Gramenitsky, I.M., Ivanov, V.G., Lednický, R., Tikhonova, L.A., Valkárová, A., Vrba, V., Zlatanov, Z., Ervanne, J., Ljung, S., Orava, R., Villanen, H., Villanen, P., Patočka, J., Korolev, B.V., Selektor, Ya.M., Shulyachenko, V.N., Turov, V.F., Dementiev, R.K., Leikin, E.M., Pavlova, A.G., Pozhidaeva, N.A., Rud, V.I., Rob, L., Žáček, J., Böhm, J., Chýla, J., Cvach, J., Herynek, I., Reimer, P., Sedlak, J., Šimák, V.

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