Search Results - Boruzdina, Anna B.

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  1. 1
    Semi-Empirical Method for Estimation of Single-Event Upset Cross Section for SRAM DICE Cells

    Semi-Empirical Method for Estimation of Single-Event Upset Cross Section for SRAM DICE Cells by Gorbunov, Maxim S., Boruzdina, Anna B., Dolotov, Pavel S.

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  2. 2
    Design of 65 nm CMOS SRAM for Space Applications: A Comparative Study

    Design of 65 nm CMOS SRAM for Space Applications: A Comparative Study by Gorbunov, Maxim S., Dolotov, Pavel S., Antonov, Andrey A., Zebrev, Gennady I., Emeliyanov, Vladimir V., Boruzdina, Anna B., Petrov, Andrey G., Ulanova, Anastasia V.

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  3. 3
    Temperature Dependence of MCU Sensitivity in 65 nm CMOS SRAM

    Temperature Dependence of MCU Sensitivity in 65 nm CMOS SRAM by Boruzdina, Anna B., Sogoyan, Armen V., Smolin, Anatoly A., Ulanova, Anastasia V., Gorbunov, Maxim S., Chumakov, Alexander I., Boychenko, Dmitry V.

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    A simple analytical model of single-event upsets in bulk CMOS

    A simple analytical model of single-event upsets in bulk CMOS by Sogoyan, Armen V., Chumakov, Alexander I., Smolin, Anatoly A., Ulanova, Anastasia V., Boruzdina, Anna B.

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    Design of 65 nm CMOS SRAM for space applications: A comparative study

    Design of 65 nm CMOS SRAM for space applications: A comparative study by Gorbunov, Maxim S., Dolotov, Pavel S., Antonov, Andrey A., Zebrev, Gennady I., Emeliyanov, Vladimir V., Boruzdina, Anna B., Petrov, Andrey G., Ulanova, Anastasia V.

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  6. 6
    Verification of SRAM MСUs calculation technique for experiment time optimization

    Verification of SRAM MСUs calculation technique for experiment time optimization by Boruzdina, Anna B., Ulanova, Anastasia V., Petrov, Andrey G., Telets, Vitaly A., Reviriego, Pedro, Maestro, Juan Antonio

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