Electron transport in GaAs/AlAs quantum wire transistor structure in periodical electric field by Borzdov, A.V., Pozdnyakov, D.V., Borzdov, V.M.

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Electron drift velocity control in transistor structure based on GaAs quantum wire by Borzdov, A.V., Pozdnyakov, D.V., Borzdov, V.M.

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Monte Carlo Simulation of Nonstationary Electron Transport in GaAs/AlAs Quantum Wire by Borzdov, A.V., Pozdnyakov, D.V., Borzdov, V.M.

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Calculation of Electron Drift Velocity in Undoped GaAs Nanowires by Pozdnyakov, D.V., Borzdov, A.V., Borzdov, V.M.

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Calculation of Electron Mobility in Thin Undoped GaAs Quantum Wires by Pozdnyakov, D.V., Borzdov, A.V., Galenchik, V.O., Borzdov, V.M.

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Influence of Gate Bias on Surface Roughness Scattering Rate in GaAs/AlAs Transistor Structure by Borzdov, A.V., Pozdnyakov, D.V., Galenchik, V.O., Borzdov, V.M.

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The Application of the Object-Oriented Approach to the Development of Monte Carlo Electron Devices Simulation Software by Borzdov, V.M., Galenchik, V.O., Pozdnyakov, D.V., Zhevnyak, O.G., Komarov, F.F., Borzdov, A.V.

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Insight into effect of water additive on carbon remaining in metal alloys after high-pressure high-temperature diamond synthesis by Fedoseeva, Yu.V., Okotrub, A.V., Bulusheva, L.G., Maksimovskiy, E.A., Senkovskiy, B.V., Borzdov, Yu.M., Palyanov, Yu.N.

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High pressure generation using scaled-up Kawai-cell by Shatskiy, A., Katsura, T., Litasov, K.D., Shcherbakova, A.V., Borzdov, Y.M., Yamazaki, D., Yoneda, A., Ohtani, E., Ito, E.

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Graphitization of 13C enriched fine-grained graphitic material under high-pressure annealing by Fedoseeva, Yu.V., Okotrub, A.V., Koroteev, V.O., Borzdov, Yu.M., Palyanov, Yu. N., Shubin, Yu.V., Maksimovskiy, E.A., Makarova, A.A., Münchgesang, W., Bulusheva, L.G., Vyalikh, A.

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