Search Results - Bose J.V., S.C.

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    A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)

    A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT) by Spulber, O., Narayanan, E.M.S., Hardikar, S., De Souza, M.M., Sweet, M., Bose J.V., S.C.

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