Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design by Bothe, Kyle M., Ganguly, Satyaki, Guo, Jia, Liu, Yueying, Niyonzima, Alex, Tornblad, Olof, Fisher, Jeremy, Gajewski, Don A., Sheppard, Scott T., Noori, Basim

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Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN by BOTHE, Kyle M, VON HAUFF, Peter A, AFSHAR, Amir, FOROUGHI-ABARI, Ali, CADIEN, Kenneth C, BARLAGE, Douglas W

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Defect Characterization of PEALD High-k ZrO2 Films Fabricated on III-V Materials by Rezazadeh, Vallen G., Bothe, Kyle M., Afshar, Amir, Cadien, Kenneth C., Barlage, Douglas W.

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DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited) by Ganguly, Satyaki, Bothe, Kyle M., Niyonzima, Alexandre, Smith, Thomas, Liu, Yueying, Fisher, Jeremy, Radulescu, Fabian, Gajewski, Donald A., Sheppard, Scott T., Milligan, Jim W., Noori, Basim, Palmour, John W.

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Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High- \kappa Dielectrics by Bothe, K. M., von Hauff, P. A., Afshar, A., Foroughi-Abari, A., Cadien, K. C., Barlage, D. W.

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Underlying design advantages for GaN MOSFETs compared with GaN HFETs for power applications by Bothe, Kyle M., Barlage, Douglas W.

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Electrical Comparison of and Gate Dielectrics on GaN by Bothe, Kyle M., von Hauff, Peter A., Afshar, Amir, Foroughi-Abari, Ali, Cadien, Kenneth C., Barlage, Douglas W.

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High-mobility solution-processed zinc oxide thin films on silicon nitride by Benlamri, Mourad, Bothe, Kyle M., Ma, Alex M., Shoute, Gem, Afshar, Amir, Sharma, Himani, Mohammadpour, Arash, Gupta, Manisha, Cadien, Kenneth C., Tsui, Ying Y., Shankar, Karthik, Barlage, Douglas W.

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Capacitance Engineering of GaN HEMT Technologies with Recessed Field Plate by Bothe, Kyle M., King, Matthew R., Guo, Jia, Liu, Yueying, Sriram, Saptha, Fisher, Jeremy, Sheppard, Scott T., Noori, Basim

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Defect Characterization of PEALD High-k ZrO 2 Films Fabricated on III–V Materials by Rezazadeh, Vallen G., Bothe, Kyle M., Afshar, Amir, Cadien, Kenneth C., Barlage, Douglas W.

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Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High-[Formula Omitted] Dielectrics by Bothe, Kyle M, von Hauff, Peter A, Afshar, Amir, oughi-Abari, Ali, Cadien, Kenneth C, Barlage, Douglas W

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Zinc oxide thin film transistors with Schottky source barriers by Ma, Alex M., Gupta, Manisha, Chowdhury, Fatema Rezwana, Shen, Mei, Bothe, Kyle, Shankar, Karthik, Tsui, Ying, Barlage, Douglas W.

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