Simulation of self-heating effects in different SOI MOS architectures by Braccioli, M., Curatola, G., Yang, Y., Sangiorgi, E., Fiegna, C.

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Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs by Barin, N., Braccioli, M., Fiegna, C., Sangiorgi, E.

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A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs by Palestri, P., Alexander, C., Asenov, A., Aubry-Fortuna, V., Baccarani, G., Bournel, A., Braccioli, M., Cheng, B., Dollfus, P., Esposito, A., Esseni, D., Fenouillet-Beranger, C., Fiegna, C., Fiori, G., Ghetti, A., Iannaccone, G., Martinez, A., Majkusiak, B., Monfray, S., Peikert, V., Reggiani, S., Riddet, C., Saint-Martin, J., Sangiorgi, E., Schenk, A., Selmi, L., Silvestri, L., Toniutti, P., Walczak, J.

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Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections by Riolino, I., Braccioli, M., Lucci, L., Palestri, P., Esseni, D., Fiegna, C., Selmi, L.

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Simulation of self-heating effects in different SOI MOS architectures: Special Issue with Papers Selected from the Ultimate Integration on Silicon Conference, Ulis 2008 by BRACCIOLI, M, CURATOLA, G, YANG, Y, SANGIORGI, E, FIEGNA, C

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Monte-Carlo simulation of MOSFETs with band offsets in the source and drain by Braccioli, M., Palestri, P., Mouis, M., Poiroux, T., Vinet, M., Le Carval, G., Fiegna, C., Sangiorgi, E., Deleonibus, S.

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Monte-Carlo simulation of MOSFETs with band offsets in the source and drain : Ultimate integration on silicon conference 2007 by BRACCIOLI, M, PALESTRI, P, MOUIS, M, POIROUX, T, VINET, M, LE CARVAL, G, FIEGNA, C, SANGIORGI, E, DELEONIBUS, S

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A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs: Papers Selected from the Ultimate Integration on Silicon Conference 2009,... by PALESTRI, P, ALEXANDER, C, ESSENI, D, FENOUILLET-BERANGER, C, FIEGNA, C, FIORI, G, GHETTI, A, IANNACCONE, G, MARTINEZ, A, MAJKUSIAK, B, MONFRAY, S, PEIKERT, V, ASENOV, A, REGGIANI, S, RIDDET, C, SAINT-MARTIN, J, SANGIORGI, E, SCHENK, A, SELMI, L, SILVESTRI, L, TONIUTTI, P, WALCZAK, J, AUBRY-FORTUNA, V, BACCARANI, G, BOURNEL, A, BRACCIOLI, M, CHENG, B, DOLLFUS, P, ESPOSITO, A

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Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections by Riolino, I., Braccioli, M., Lucci, L., Esseni, D., Fiegna, C., Palestri, R., Selmi, L.

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Drain current computation in nanoscale nMOSFETs: Comparison of transport models by Sangiorgi, E, Alexander, C, Asenov, A, Aubry-Fortuna, V, Baccarani, G, Bournel, A, Braccioli, M, Cheng, B, Dollfus, P, Esposito, A, Esseni, D, Fenouillet-Beranger, C, Fiegna, C, Fiori, G, Ghetti, A, Iannaccone, G, Martinez, A, Majkusiak, B, Monfray, S, Palestri, P, Peikert, V, Reggiani, S, Riddet, C, Saint-Martin, J, Schenk, A, Selmi, L, Silvestri, L, Toniutti, P, Walczak, J

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Simulation of self-heating effects in 30nm gate length FinFET by Braccioli, M., Curatola, G., Yang, Y., Sangiorgi, E., Fiegna, C.

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32nm technology node Double-Gate SOI MOSFET using SiO2 gate stacks by Sangiorgi, E., Barin, N., Braccioli, M., Fiegna, C.

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Scaling the high-performance double-gate SOI MOSFET down to the 32 nm technology node with SiO/sub 2/-based gate stacks by Barin, N., Braccioli, M., Fiegna, C., Sangiorgi, E.

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Experimental assessment of self-heating in SOI FinFETs by Scholten, A.J., Smit, G.D.J., Pijper, R.M.T., Tiemeijer, L.F., Tuinhout, H.P., van der Steen, J.-L.P.J., Mercha, A., Braccioli, M., Klaassen, D.B.M.

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Comparison of semiclassical transport formulations including quantum corrections for advanced devices with High-K gate stacks by Bufler, F M, Aubry-Fortuna, V, Bournel, A, Braccioli, M, Dollfus, P, Esseni, D, Fiegna, C, Gamiz, F, De Michielis, M, Palestri, P, Saint-Martin, J, Sampedro, C, Sangiorgi, E, Selmi, L, Toniutti, P

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Comparison of advanced transport models for nanoscale nMOSFETs by Palestri, P., Alexander, C., Asenov, A., Baccarani, G., Bournel, A., Braccioli, M., Cheng, B., Dollfus, P., Esposito, A., Esseni, D., Ghetti, A., Fiegna, C., Fiori, G., Aubry-Fortuna, V., Iannaccone, G., Martinez, A., Majkusiak, B., Monfray, S., Reggiani, S., Riddet, C., Saint-Martin, J., Sangiorgi, E., Schenk, A., Selmi, L., Silvestri, L., Walczak, J.

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Regulation of a progenitor gene program by SOX4 is essential for mammary tumor proliferation by Roukens, M. Guy, Frederiks, Cynthia L., Seinstra, Danielle, Braccioli, Luca, Khalil, Antoine A., Pals, Cornelieke, De Neck, Simon, Bornes, Laura, Beerling, Evelyne, Mokry, Michal, de Bruin, Alain, Westendorp, Bart, van Rheenen, Jacco, Coffer, Paul J.

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Oncosuppressive role of p53-induced miR-205 in triple negative breast cancer by Piovan, Claudia, Palmieri, Dario, Di Leva, Gianpiero, Braccioli, Luca, Casalini, Patrizia, Nuovo, Gerard, Tortoreto, Monica, Sasso, Marianna, Plantamura, Ilaria, Triulzi, Tiziana, Taccioli, Cristian, Tagliabue, Elda, Iorio, Marilena V., Croce, Carlo M.

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Therapeutic Potential of Genetically Modified Mesenchymal Stem Cells After Neonatal Hypoxic-Ischemic Brain Damage by van Velthoven, Cindy TJ, Braccioli, Luca, Willemen, Hanneke LDM, Kavelaars, Annemieke, Heijnen, Cobi J

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P17 DOACS EFFECTIVENESS AND SAFETY: FURTHER CONFIRMATIONS FROM REAL WORLD EXPERIENCE by Ciavolella, M, Cianfrocca, M, Braccioli, C, Ceccacci, R, Bisegni, S, De Carolis, M, Ciavolella, F, Bidolli, F, Frongillo, D, Sarli, G

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