Development of external coincidence ERDA: Hydrogen analysis of moist samples by Saito, M., Holm, K., Bregolin, F.L., Hofsäss, H.

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External RBS/PIXE analysis for evaluating quantum dots internalization into HeLa cells by Saito, M., Koike, S., Holm, K., Bregolin, F.L., Hofsäss, H.

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Photoluminescence and structural studies of Tb and Eu implanted at high temperatures into SiO2 films by Bregolin, F.L., Sias, U.S., Behar, M.

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Low temperature and decay lifetime photoluminescence of Eu and Tb nanoparticles embedded into SiO2 by Bregolin, F.L., Franzen, P., Boudinov, H., Sias, U.S., Behar, M.

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Structural and optical properties of Ge nanocrystals obtained by hot ion implantation into SiO2 and further ion irradiation by Bregolin, F.L., Behar, M., Sias, U.S.

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Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures by Gaiduk, P.I., Lundsgaard Hansen, J., Larsen, A. Nylandsted, Korolik, O.V., Bregolin, F.L., Skorupa, W.

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Structural and photoluminescence properties of Si nanoclusters obtained by ion implantation into Si3N4 films by BREGOLIN, F. L, BEHAR, M, SIAS, U. S, MOREIRA, E. C

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Structural and photoluminescence properties of Si nanoclusters obtained by ion implantation into Si 3N 4 films by Bregolin, F.L., Behar, M., Sias, U.S., Moreira, E.C.

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Diffusion study of 15N implanted into α-Ti using the nuclear resonance technique by Bregolin, F.L., Behar, M., Dyment, F.

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Photoluminescence induced from hot Ge implantation into SiO2 by Bregolin, F.L., Behar, M., Sias, U.S., Moreira, E.C.

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Photoluminescence induced by Si implantation into Si3N4 matrix by Bregolin, F.L., Behar, M., Sias, U.S., Moreira, E.C.

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Diffusion study of 18O implanted into α-Ti using the nuclear resonance technique by BREGOLIN, F. L, BEHAR, M, DYMENT, F

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