Search Results - Brighten, J.C.

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  1. 1
    The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE

    The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE by Brighten, J.C., Kubiak, R.A., Phillips, P.J., Whall, T.E., Parker, E.H.C., Hawkins, I.D., Peaker, A.R.

    Published in Thin solid films
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  2. 2
    Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C

    Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C by Powell, A.R., Kubiak, R.A.A., Newstead, S.M., Parry, C., Mattey, N.L., Smith, D.W., Brighten, J.C., Emeleus, C.J., Naylor, T., Basaran, E., Whall, T.E., Dowsett, M.G., Barlow, R.D., Parker, E.H.C., Bowen, D.K.

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