Determination of the outward relaxation of cleaved strained InAs structures by scanning tunneling microscopy by Bruls, D.M., Koenraad, P.M., Hopkinson, M., Wolter, J.H., Salemink, H.W.M.

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Composition profiling at the atomic scale in III–V nanostructures by cross-sectional STM by Koenraad, P.M., Bruls, D.M., Davies, J.H., Gill, S.P.A., Long, Fei, Hopkinson, M., Skolnick, M., Wolter, J.H.

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Cracking self-assembled InAs quantum dots by Bruls, D.M., Vugs, J.W.A.M., Koenraad, P.M., Skolnick, M.S., Hopkinson, M., Wolter, J.H.

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Quantitative determination of the charge density on surface steps on semiconductors by high-resolution local scanning-tunneling spectroscopy by Kemerink, M., Reusch, T.C.G., Bruls, D.M., Koenraad, P.M., Salemink, H.W.M., Wolter, J.H.

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Two-dimensional optical storage by Coene, W.M.J., Bruls, D.M., Immink, A.H.J., van der Lee, A.M., Hekstra, A.P., Riani, J., van Beneden, S., Ciacci, M., Bergmans, J.W.M., Furuki, M.

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Dynamic scaling of plasma etched InP surface by Silova, M., Bruls, D.M., Silov, A.Yu, Roy, B.H.V., Smalbrugge, E., Karouta, F., Koenraad, P.M., Wolter, J.H.

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Cover-Layer Incident Near-Field Recording: Towards 4-Layer Discs using Dynamic Tilt Control by Verschuren, C.A., Zijp, F., Lee, J.I., van den Eerenbemd, J.M.A., Bruls, D.M.

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High Data Transfer Rate Cover-Incident Near-Field Recording System with a Solid Immersion Lens by Lee, J.I., Brills, D.M., van den Eerenbeemd, J.M.A., Verschuren, C.A., Zijp, F., Yin, B., Vlutters, R.

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