Exposure to OPFRs Is Associated with Obesity and Dysregulated Serum Lipid Profiles: Data from 2017-2018 NHANES by Li, He, Li, Fenglin, Zhou, Chaoyi, Bu, Jifan, Yang, Hao, Zhong, Liangchen, Xing, Weilong, Li, Liangzhong

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Coexistence of electric field controlled ferromagnetism and resistive switching for TiO2 film at room temperature by Ren, Shaoqing, Qin, Hongwei, Bu, Jianpei, Zhu, Gengchang, Xie, Jihao, Hu, Jifan

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Bioorthogonal Chemistry-Guided Inhalable Nanoprodrug to Circumvent Cisplatin Resistance in Orthotopic Nonsmall Cell Lung Cancer by Tang, Lu, Yin, Yue, Cao, Yuqi, Liu, Hening, Qing, Guangchao, Fu, Cong, Li, Zixuan, Zhu, Yuanbo, Shu, Weijie, He, Shun, Gao, Jifan, Zhang, Yi, Wang, Zihan, Bu, Jianlan, Li, Xuejing, Zhu, Mengliang, Liang, Xing-Jie, Wang, Wei

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Electric field modulated ferromagnetism in ZnO films deposited at room temperature by Bu, Jianpei, Liu, Xinran, Hao, Yanming, Zhou, Guangjun, Cheng, Bin, Huang, Wei, Xie, Jihao, Zhang, Heng, Qin, Hongwei, Hu, Jifan

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Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature by Ren, Shaoqing, Zhu, Gengchang, Xie, Jihao, Bu, Jianpei, Qin, Hongwei, Hu, Jifan

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Resistive switching and ferromagnetism modulation in copper oxide film on Nb:SrTiO3 substrate by Xie, Jihao, Ren, Shaoqing, Bu, Jianpei, Cheng, Bin, Liu, Weikang, Liu, Liang, Zhou, Guangjun, Qin, Hongwei, Hu, Jifan

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Resistive switching and electric field control of ferromagnetism in SnO2 films deposited at room temperature by Liu, Xinran, Bu, Jianpei, Ren, Xue, Cheng, Bin, Xie, Jihao, Chen, Lubin, Gao, Chengyong, Liu, Liang, Zhang, Heng, Zhou, Guangjun, Qin, Hongwei, Hu, Jifan

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Resistive switching and ferromagnetism modulation in copper oxide film on Nb:SrTiO^sub 3^ substrate by Xie, Jihao, Ren, Shaoqing, Bu, Jianpei, Cheng, Bin, Liu, Weikang, Liu, Liang, Zhou, Guangjun, Qin, Hongwei, Hu, Jifan

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Resistive switching and electrical control of ferromagnetism in a Ag/HfO 2 /Nb:SrTiO 3 /Ag resistive random access memory (RRAM) device at room temperature by Ren, Shaoqing, Zhu, Gengchang, Xie, Jihao, Bu, Jianpei, Qin, Hongwei, Hu, Jifan

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Resistive switching and electrical control of ferromagnetism in a Ag/HfO sub(2)/Nb:SrTiO sub(3)/Ag resistive random access memory (RRAM) device at room temperature by Ren, Shaoqing, Zhu, Gengchang, Xie, Jihao, Bu, Jianpei, Qin, Hongwei, Hu, Jifan

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Coexistence of electric field controlled ferromagnetism and resistive switching for TiO{sub 2} film at room temperature by Ren, Shaoqing, Qin, Hongwei, Bu, Jianpei, Zhu, Gengchang, Xie, Jihao, Hu, Jifan

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