GaAs radiation imaging detectors with an active layer thickness up to 1 mm by Tyazhev, A.V, Budnitsky, D.L, Koretskay, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Vorobiev, A.P

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GaAs resistor structures for X-ray imaging detectors by Ayzenshtat, G.I, Budnitsky, D.L, Koretskaya, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Tyazhev, A.V, Vorobiev, A.P

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GaAs detector material made from 3-inch wafers by Ayzenshtat, G.I., Budnitsky, D.L., Koretskaya, O.B., Novikov, V.A., Mokeev, D.Y., Okaevich, L.S., Tolbanov, O.P., Tyazhev, A.V.

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GaAs radiation imaging detectors with an active layer thickness up to 1mm by Tyazhev, A.V, Budnitsky, D.L, Koretskay, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Vorobiev, A.P

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GaAs as a material for particle detectors by Ayzenshtat, A.I., Budnitsky, D.L., Koretskaya, O.B., Okaevich, L.S., Novikov, V.A., Potapov, A.I., Tolbanov, O.P., Tyazhev, A.V., Vorobiev, A.P.

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GaAs structures for X-ray imaging detectors by Ayzenshtat, G.I., Bakin, N.N., Budnitsky, D.L., Drugova, E.P., Germogenov, V.P., Khludkov, S.S., Koretskaya, O.B., Okaevich, L.S., Porokhovnichenko, L.P., Potapov, A.I., Smith, K.M., Tolbanov, O.P., Tyazhev, A.V., Vilisova, M.D., Vorobiev, A.P.

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Epitaxial structures based on compensated GaAs for γ- and X-ray detectors by Budnitsky, D.L., Germogenov, V.P., Guschin, S.M., Larionov, A.A., Porokhovnichenko, L.P., Potapov, A.I., Tolbanov, O.P., Vorobiev, A.P.

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Analysis of free-carrier charges distribution in the n-GaAs monocrystals used at formation of the high-resistance material for the ionizing radiation sensors by Budnitsky, D.L., Koretskaya, O.B., Novikov, V.A., Tolbanov, O.P.

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Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr by Budnitsky, D.L., Lychagin, A.D., Okaevich, L.S., Tolbanov, O.P.

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