Search Results - Buj-Dufournet, C.

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  1. 1
    Analog/RF Performance of Multichannel SOI MOSFET

    Analog/RF Performance of Multichannel SOI MOSFET by Tao Chuan Lim, Bernard, E., Rozeau, O., Ernst, T., Guillaumot, B., Vulliet, N., Buj-Dufournet, C., Paccaud, M., Lepilliet, S., Dambrine, G., Danneville, F.

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  2. 2
    High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

    High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding by Weber, O., Faynot, O., Andrieu, F., Buj-Dufournet, C., Allain, F., Scheiblin, P., Foucher, J., Daval, N., Lafond, D., Tosti, L., Brevard, L., Rozeau, O., Fenouillet-Beranger, C., Marin, M., Boeuf, F., Delprat, D., Bourdelle, K., Nguyen, B.-Y., Deleonibus, S.

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  3. 3
    High Scalability and Low Variability of Planar Fully Depleted SOI MOSFETs

    High Scalability and Low Variability of Planar Fully Depleted SOI MOSFETs by Weber, Olivier, Andrieu, Francois, Fenouillet-Béranger, Claire, Buj-Dufournet, Christel, Barral, Vincent, Perreau, Pierre, Tosti, Lucie, Brevard, Laurent, Faynot, Olivier

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  4. 4
    GaN HEMTs on silicon for power devices

    GaN HEMTs on silicon for power devices by Escoffier, R., Torres, A., Fayolle-Lecocq, M., Buj-Dufournet, C., Morvan, E., Charles, M., Poisson, M. A.

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  5. 5
    Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack

    Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack by Barral, V., Poiroux, T., Andrieu, F., Buj-Dufournet, C., Faynot, O., Ernst, T., Brevard, L., Fenouillet-Beranger, C., Lafond, D., Hartmann, J.M., Vidal, V., Allain, F., Daval, N., Cayrefourcq, I., Tosti, L., Munteanu, D., Autran, J.L., Deleonibus, S.

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  6. 6
    Electron mean-free-path experimental extraction on ultra-thin and ultra-short strained and unstrained FDSOI n-MOSFETs

    Electron mean-free-path experimental extraction on ultra-thin and ultra-short strained and unstrained FDSOI n-MOSFETs by Barral, V., Poiroux, T., Barraud, S., Bonno, O., Andrieu, F., Buj-Dufournet, C., Brevard, L., Lafond, D., Faynot, O., Munteanu, D., Autran, J.L., Deleonibus, S.

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  7. 7
    Comparative Scalability of PVD and CVD TiN on HfO2 as a Metal Gate Stack for FDSOI cMOSFETs down to 25nm Gate Length and Width

    Comparative Scalability of PVD and CVD TiN on HfO2 as a Metal Gate Stack for FDSOI cMOSFETs down to 25nm Gate Length and Width by Andrieu, F., Faynot, O., Garros, X., Lafond, D., Buj-Dufournet, C., Tosti, L., Minoret, S., Vidal, V., Barbe, J.C., Allain, F., Rouchouze, E., Vandroux, L., Cosnier, V., Casse, M., Delaye, V., Carabasse, C., Burdin, M., Rolland, G., Guillaumot, B., Colonna, J.P., Besson, P., Brevard, L., Mariolle, D., Holliger, P., Vandooren, A., Fenouillet-Beranger, C., Martin, F., Deleonibus, S.

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