Video rate near-field scanning optical microscopy by Bukofsky, S. J., Grober, R. D.

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Imaging of photogenerated acid in a chemically amplified photoresist by Bukofsky, S. J., Feke, G. D., Wu, Q., Grober, R. D., Dentinger, P. M., Taylor, J. W.

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Application of near-field optics to critical dimension metrology by Bukofsky, S. J., Selberg, S. A., Grober, R. D., Trautman, J. K.

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High performance bulk planar 20nm CMOS technology for low power mobile applications by Huiling Shang, Jain, S., Josse, E., Alptekin, E., Nam, M. H., Kim, S. W., Cho, K. H., Kim, I., Liu, Y., Yang, X., Wu, X., Ciavatti, J., Kim, N. S., Vega, R., Kang, L., Meer, H. V., Samavedam, S., Celik, M., Soss, S., Utomo, H., Ramachandran, R., Lai, W., Sardesai, V., Tran, C., Kim, J. Y., Park, Y. H., Tan, W. L., Shimizu, T., Joy, R., Strane, J., Tabakman, K., Lalanne, F., Montanini, P., Babich, K., Kim, J. B., Economikos, L., Cote, W., Reddy, C., Belyansky, M., Arndt, R., Kwon, U., Wong, K., Koli, D., Levedakis, D., Lee, J. W., Muncy, J., Krishnan, S., Schepis, D., Chen, X., Kim, B. D., Tian, C., Linder, B. P., Cartier, E., Narayanan, V., Northrop, G., Menut, O., Meiring, J., Thomas, A., Aminpur, M., Park, S. H., Lee, K. Y., Kim, B. Y., Rhee, S. H., Hamieh, B., Srivastava, R., Koshy, R., Goldberg, C., Pallachalil, M., Chae, M., Ogino, A., Watanabe, T., Oh, M., Mallela, H., Codi, D., Malinge, P., Weybright, M., Mann, R., Mittal, A., Eller, M., Lian, S., Li, Y., Divakaruni, R., Bukofsky, S., Kim, J. D., Sudijono, J., Neumueller, W., Matsuoka, F., Sampson, R.

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High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell by Leobandung, E., Nayakama, H., Mocuta, D., Miyamoto, K., Angyal, M., Meer, H.V., McStay, K., Ahsan, I., Allen, S., Azuma, A., Belyansky, M., Bentum, R.-V., Cheng, J., Chidambarrao, D., Dirahoui, B., Fukasawa, M., Gerhardt, M., Gribelyuk, M., Halle, S., Harifuchi, H., Harmon, D., Heaps-Nelson, J., Hichri, H., Ida, K., Inohara, M., Inouc, I.C., Jenkins, K., Kawamura, T., Kim, B., Ku, S.-K., Kumar, M., Lane, S., Liebmann, L., Logan, R., Melville, I., Miyashita, K., Mocuta, A., O'Neil, P., Ng, M.-F., Nogami, T., Nomura, A., Norris, C., Nowak, E., Ono, M., Panda, S., Penny, C., Radens, C., Ramachandran, R., Ray, A., Rhee, S.-H., Ryan, D., Shinohara, T., Sudo, G., Sugaya, F., Strane, J., Tan, Y., Tsou, L., Wang, L., Wirbeleit, F., Wu, S., Yamashita, T., Yan, H., Ye, Q., Yoneyama, D., Zamdmer, D., Zhong, H., Zhu, H., Zhu, W., Agnello, P., Bukofsky, S., Bronner, G., Crabbe, E., Freeman, G., Huang, S.-F., Ivers, T., Kuroda, H., McHerron, D., Pellerin, J., Toyoshima, Y., Subbanna, S., Kepler, N., Su, L.

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High order lens aberration monitor by Preuninger, J., Bukofsky, S., Kunkel, G.

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A lithographically-friendly 6F/sup 2/ DRAM cell by Bukofsky, S., Mandelman, J., Thomas, A., Radens, C., Kunkel, G.

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Extending KrF Lithography to 0.13 um sub-8F2 DRAM Technology: The Importance of Lithography-Centric Design by Bukofsky, S., Thomas, A., Kunkel, G., Preuninger, J.

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Personal service corporations: down but not out. (Special Issue: Small Business) by Bukofsky, Ward M, Dunn, William J

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An orthogonal 6F/sup 2/ trench-sidewall vertical device cell for 4 Gb/16 Gb DRAM by Radens, C.J., Kudelka, S., Nesbit, L., Malik, R., Dyer, T., Dubuc, C., Joseph, T., Seitz, M., Clevenger, L., Arnold, N., Mandelman, J., Divakaruni, R., Casarotto, D., Lea, D., Jaiprakash, V.C., Sim, J., Faltermeier, J., Low, K., Strane, J., Halle, S., Ye, Q., Bukofsky, S., Gruening, U., Schloesser, T., Bronner, G.

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A highly manufacturable 110nm DRAM technology with 8F2 vertical transistor cell for 1Gb and beyond by AKATSU, H, WEIS, R, STRANE, J, GOEBEL, T, KWON, O.-J, SUNG, C. Y, PARKINSON, P, WILSON, K, MCSTAY, I, CHUDZIK, M, DOBUZINSKY, D, JACUNSKI, M, CHENG, K, RANSOM, C, SETTLEMYER, K, ECONOMIKOS, L, SIMPSON, A, KNORR, A, NAEEM, M, STOJAKOVIC, G, ROBL, W, GLUSCHENKOV, O, LIEGL, B, SEITZ, M, WU, C.-H, WU, Q, LI, W.-K, CHOI, C. J, ARNOLD, N, JOSEPH, T, VARN, K, WEYBRIGHT, M, MCSTAY, K, KANG, W.-T, KIM, M-S, LI, Y, BUKOFSKY, S, JAMMY, R, SCHUTZ, R, GUTMANN, A, BERGNER, W, DIVAKARUNI, R, BACK, D, CRABBE, E, MUELLER, W, RAMACHANDRAN, R, BRONNER, G, DYER, T, KIM, B, KIM, D.-K, MALIK, R

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A 0.135 /spl mu/m/sup 2/ 6F/sup 2/ trench-sidewall vertical device cell for 4 Gb/16 Gb DRAM by Radens, C.J., Gruening, U., Mandelman, J.A., Seitz, M., Lea, D., Casarotto, D., Clevenger, L., Nesbit, L., Malik, R., Halle, S., Kudelka, S., Tews, H., Divakaruni, R., Sim, J., Strong, A., Tibbel, D., Arnold, N., Bukofsky, S., Preuninger, J., Kunkel, G., Bronner, G.

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A highly manufacturable 110 nm DRAM technology with 8F/sup 2/ vertical transistor cell for 1Gb and beyond by Akatsu, H., Weis, R., Cheng, K., Seitz, M., Kim, M.-S., Ramachandran, R., Dyer, T., Kim, B., Kim, D.-K., Malik, R., Strane, J., Goebel, T., Kwon, O.-J., Sung, C.Y., Parkinson, P., Wilson, K., McStay, I., Chudzik, M., Dobuzinsky, D., Jacunski, M., Ransom, C., Settlemyer, K., Economikos, L., Simpson, A., Knorr, A., Naeem, M., Stojakovic, G., Robl, W., Gluschenkov, O., Liegl, B., Wu, C.-H., Wu, Q., Li, W.-K., Choi, C.J., Arnold, N., Joseph, T., Varn, K., Weybright, M., McStay, K., Kang, W.-T., Li, Y., Bukofsky, S., Jammy, R., Schutz, R., Gutmann, A., Bergner, W., Divakaruni, R., Back, D., Crabbe, E., Mueller, W., Bronner, G.

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