Search Results - Burek, G.J.

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  1. 1
    Height-selective etching for regrowth of self-aligned contacts using MBE

    Height-selective etching for regrowth of self-aligned contacts using MBE by Burek, G.J., Wistey, M.A., Singisetti, U., Nelson, A., Thibeault, B.J., Bank, S.R., Rodwell, M.J.W., Gossard, A.C.

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  2. 2
    hbox\hbox\hbox Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

    hbox\hbox\hbox Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth by Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Thibeault, B.J., Gossard, A.C., Rodwell, M.J.W., Byungha Shin, Kim, E.J., McIntyre, P.C., Bo Yu, Yu Yuan, Wang, D., Yuan Taur, Asbeck, P., Yong-Ju Lee

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  3. 3
    [Formula Omitted] Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

    [Formula Omitted] Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth by Singisetti, U, Wistey, M.A, Burek, G.J, Baraskar, A.K, Thibeault, B.J, Gossard, A.C, Rodwell, M.J.W, Shin, Byungha, Kim, E.J, McIntyre, P.C, Yu, Bo, Yuan, Yu, Wang, D, Taur, Yuan, Asbeck, P, Lee, Yong-Ju

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  4. 4
    Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth

    Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth by Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Cagnon, J., Thibeault, B., Gossard, A.C., Stemmer, S., Rodwell, M.J.W., Eunji Kim, Byungha Shin, McIntyre, P.C., Yong-Ju Lee

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