The role of excess silicon and in situ etching on 4H-SiC and 6H-SiC epitaxial layer morphology by BURK, A. A, ROWLAND, L. B

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SiC and GaN wide bandgap semiconductor materials and devices by Burk, A.A, O'Loughlin, M.J, Siergiej, R.R, Agarwal, A.K, Sriram, S, Clarke, R.C, MacMillan, M.F, Balakrishna, V, Brandt, C.D

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Advances in SiC materials and devices: an industrial point of view by Siergiej, R.R, Clarke, R.C, Sriram, S, Agarwal, A.K, Bojko, R.J, Morse, A.W, Balakrishna, V, MacMillan, M.F, Burk, Jr, A.A, Brandt, C.D

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SiC epitaxial layer growth in a novel multi-wafer vapor-phase epitaxial (VPE) reactor by Burk, A.A., O'Loughlin, M.J., Nordby, H.D.

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Homoepitaxial VPE Growth of SiC Active Layers by Burk Jr, A. A., Rowland, L. B.

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A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures by Agarwal, A.K., Siergiej, R.R., Seshadri, S., White, M.H., McMullin, P.G., Burk, A.A., Rowland, L.B., Brandt, C.D., Hopkins, R.H.

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4H-SiC MESFET's with 42 GHz fmax by Sriram, S., Augustine, G., Burk, A.A., Glass, R.C., Hobgood, H.M., Orphanos, P.A., Rowland, L.B., Smith, T.J., Brandt, C.D., Driver, M.C., Hopkins, R.H.

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Large diameter 6H-SiC for microwave device applications by Hobgood, H.M., Barrett, D.L., McHugh, J.P., Clarke, R.C., Sriram, S., Burk, A.A., Greggi, J., Brandt, C.D., Hopkins, R.H., Choyke, W.J.

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RF performance of SiC MESFET's on high resistivity substrates by Sriram, S., Clarke, R.C., Burk, A.A., Hobgood, H.M., McMullin, P.G., Orphanos, P.A., Siergiej, R.R., Smith, T.J., Brandt, C.D., Driver, M.C., Hopkins, R.H.

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Application of an electrochemical arsine generator on a high throughput MOVPE reactor by Burk, A.A.

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Status of SiC power devices at Northrop Grumman by Agarwal, A.K, Seshadri, S, Casady, J.B, Mani, S.S, MacMillan, M.F, Saks, Nelson, Burk, A.A, Augustine, G, Balakrishna, V, Sanger, P.A, Brandt, C.D, Rodrigues, R

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Application of an Electrochemical Arsine Generator on High Throughput MOVPE Reactor by Burk, A.A.

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Photoluminescent properties of n-GaAs electrodes: simultaneous determination of depletion widths and surface hole-capture velocities in photoelectrochemical cells by BURK, A. A. JR, JOHNSON, P. B, HOBSON, W. S, ELLIS, A. B

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4H-SiC MESFET's with 42 GHz f/sub max by Sriram, S., Augustine, G., Burk, A.A., Glass, R.C., Hobgood, H.M., Orphanos, P.A., Rowland, L.B., Smith, T.J., Brandt, C.D., Driver, M.C., Hopkins, R.H.

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Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective by Müller, St.G., Brady, M.F., Burk, A.A., Hobgood, H.McD, Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, A.R., Sumakeris, J.J., Tsvetkov, V.F., Carter, C.H.

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Photoluminescent and electroluminescent properties of Cd 0.95Mn 0.05Se electrodes by Burk, A.A., Ellis, Arthur B., Ridgley, Dana, Wold, Aaron

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Photoluminescent and electroluminescent properties of Cd0.95Mn0.05Se electrodes by Burk, A.A., Ellis, Arthur B., Ridgley, Dana, Wold, Aaron

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A compact 3W X-band GaAs MMIC amplifier based on a novel multi-push-pull circuit concept by Henry, H.G., Freitag, R.G., Brooks, R.C., Burk, A.A., Murphy, M.R.

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Recent advances in high temperature, high frequency SiC devices by Clarke, R.C., Brandt, C.D., Sriram, S., Siergiej, R.R., Morse, A.W., Agarwal, A.K., Chen, L.S., Balakrishna, V., Burk, A.A.

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Recent Advances in Wide Bandgap Materials and Devices for High Power Microwave Applications by Clarke, R.C., Siergiej, R.R., Sriram, S., Li Shu Chen, Thomas, R.N., Burk, A.A., Morse, A.W., Brandt, C.D.

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