Search Results - Burk, Jr, A.A

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  1. 1
    Advances in SiC materials and devices: an industrial point of view

    Advances in SiC materials and devices: an industrial point of view by Siergiej, R.R, Clarke, R.C, Sriram, S, Agarwal, A.K, Bojko, R.J, Morse, A.W, Balakrishna, V, MacMillan, M.F, Burk, Jr, A.A, Brandt, C.D

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  2. 2
    Homoepitaxial VPE Growth of SiC Active Layers

    Homoepitaxial VPE Growth of SiC Active Layers by Burk Jr, A. A., Rowland, L. B.

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  3. 3
    Photoluminescent properties of n-GaAs electrodes: simultaneous determination of depletion widths and surface hole-capture velocities in photoelectrochemical cells

    Photoluminescent properties of n-GaAs electrodes: simultaneous determination of depletion widths and surface hole-capture velocities in photoelectrochemical cells by BURK, A. A. JR, JOHNSON, P. B, HOBSON, W. S, ELLIS, A. B

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  4. 4
    Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

    Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective by Müller, St.G., Brady, M.F., Burk, A.A., Hobgood, H.McD, Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, A.R., Sumakeris, J.J., Tsvetkov, V.F., Carter, C.H.

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