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    Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates

    Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates by Shengurov, Vladimir, Denisov, Sergei, Chalkov, Vadim, Trushin, Vladimir, Zaitsev, Andrei, Prokhorov, Dmitry, Filatov, Dmitry, Zdoroveishchev, Anton, Ved, Mikhail, Kudrin, Alexey, Dorokhin, Mikhail, Buzynin, Yuri

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