Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs by Moonju Cho, Roussel, Philippe, Kaczer, Ben, Degraeve, Robin, Franco, Jacopo, Aoulaiche, Marc, Chiarella, Thomas, Kauerauf, Thomas, Horiguchi, Naoto, Groeseneken, Guido

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SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI by Franco, J., Kaczer, B., Roussel, P. J., Mitard, J., Moonju Cho, Witters, L., Grasser, T., Groeseneken, G.

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Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices by Moonju Cho, Jae-Duk Lee, Aoulaiche, M., Kaczer, B., Roussel, P., Kauerauf, T., Degraeve, R., Franco, J., Ragnarsson, L., Groeseneken, G.

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Digital therapeutics using virtual reality‐based visual perceptual learning for visual field defects in stroke: A double‐blind randomized trial by Namgung, Eun, Kwon, Sun U., Han, Moon‐Ku, Kim, Gyeong‐Moon, Kim, Hahn Young, Park, Kwang‐Yeol, Cho, Moonju, Choi, Ha‐Gyun, Nah, Hyun‐Wook, Lim, Hyun Taek, Kang, Dong‐Wha

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Diffusion and Gate Replacement: A New Gate-First High- k /Metal Gate CMOS Integration Scheme Suppressing Gate Height Asymmetry by Ritzenthaler, Romain, Schram, Tom, Spessot, Alessio, Caillat, Christian, Moonju Cho, Simoen, Eddy, Aoulaiche, Marc, Albert, Johan, Soon-Aik Chew, Noh, Kyoung Bong, Yunik Son, Mitard, Jerome, Mocuta, Anda, Horiguchi, Naoto, Fazan, Pierre, Thean, Aaron Voon-Yew

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Endurance of One Transistor Floating Body RAM on UTBOX SOI by Aoulaiche, Marc, Bravaix, Alain, Simoen, Eddy, Caillat, Christian, Moonju Cho, Witters, Liesbeth, Blomme, Pieter, Fazan, Pierre, Groeseneken, Guido, Jurczak, Malgorzata

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Negative Bias Temperature Instability in p-FinFETs With 45 ^ Substrate Rotation by Moonju Cho, Ritzenthaler, Romain, Krom, Raymond, Higuchi, Yuichi, Kaczer, Ben, Chiarella, Thomas, Boccardi, Guillaume, Togo, Mitsuhiro, Horiguchi, Naoto, Kauerauf, Thomas, Groeseneken, Guido

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Chemical structure of the interface in ultrathin HfO2/Si films by Lee, Jong-Cheol, Oh, S.-J., Cho, Moonju, Hwang, Cheol Seong, Jung, Ranju

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Impact of Off State Stress on advanced high-K metal gate NMOSFETs by Spessot, Alessio, Aoulaiche, Marc, Moonju Cho, Franco, Jacopo, Schram, Tom, Ritzenthaler, Romain, Kaczer, Ben

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Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs by Jin Ju Kim, Moonju Cho, Pantisano, L., Ukjin Jung, Young Gon Lee, Chiarella, T., Togo, M., Horiguchi, N., Groeseneken, G., Byoung Hun Lee

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Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate by Cho, Moonju, Park, Jaehoo, Park, Hong Bae, Hwang, Cheol Seong, Jeong, Jaehack, Hyun, Kwang Soo

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Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited HfO2 Layers by Moonju Cho, Moonju Cho, Degraeve, R, Pourtois, G, Delabie, A, Ragnarsson, L.-A, Kauerauf, T, Groeseneken, G, De Gendt, S, Heyns, M, Cheol Seong Hwang, Cheol Seong Hwang

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Off-state stress degradation mechanism on advanced p-MOSFETs by Moonju Cho, Spessot, Alessio, Kaczer, Ben, Aoulaiche, Marc, Ritzenthaler, Romain, Schram, Tom, Fazan, Pierre, Horiguchi, Naoto, Linten, Dimitri

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High- k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant by Cho, Moonju, Park, Hong Bae, Park, Jaehoo, Lee, Suk Woo, Hwang, Cheol Seong, Jang, Gi Hoon, Jeong, Jaehack

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Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing by Park, Byoung Keon, Park, Jaehoo, Cho, Moonju, Hwang, Cheol Seong, Oh, Kiyoung, Han, Youngki, Yang, Doo Young

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Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates by Cho, Moonju, Park, Hong Bae, Park, Jaehoo, Hwang, Cheol Seong, Lee, Jong-Cheol, Oh, Se-Jung, Jeong, Jaehack, Hyun, Kwang Soo, Kang, Hee-Sung, Kim, Young-Wuk, Lee, Jong-Ho

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Interface/Bulk Trap Recovery After Submelt Laser Anneal and the Impact to NBTI Reliability by Moonju Cho, Aoulaiche, Marc, Degraeve, Robin, Ortolland, Claude, Kauerauf, Thomas, Kaczer, Ben, Roussel, Philippe, Hoffmann, Thomas Y, Groeseneken, Guido

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Oxide Trapping in the InGaAs- \hbox \hbox System and the Role of Sulfur in Reducing the \hbox\hbox Trap Density by Alian, Alireza, Brammertz, G., Degraeve, R., Moonju Cho, Merckling, C., Lin, Dennis, Wang, Wei-E, Caymax, M., Meuris, M., De Meyer, K., Heyns, M.

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Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density by Park, Jaehoo, Cho, Moonju, Kim, Seong Keun, Park, Tae Joo, Lee, Suk Woo, Hong, Sug Hun, Hwang, Cheol Seong

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Interface Trap Characterization of a 5.8- \hbox} EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique by Moonju Cho, Kaczer, B., Aoulaiche, M., Degraeve, R., Roussel, P., Franco, J., Kauerauf, T., Ragnarsson, L. Å, Hoffmann, T. Y., Groeseneken, G.

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