Search Results - Cantiano, M.

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  1. 1
    Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches

    Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches by Barcellona, M., Badalà, P., Boscaglia, M., Cantiano, M., Mello, D., Ferlito, E., Pirnaci, M.D., Tenaglia, D., Fragalà, M.E.

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  2. 2
    Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison

    Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison by Albertazzi, E., Bianconi, M., Lulli, G., Nipoti, R., Cantiano, M.

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    Ion versus neutral irradiation of thin films of amorphous SiO2: an in situ X-ray photoelectron spectroscopy study

    Ion versus neutral irradiation of thin films of amorphous SiO2: an in situ X-ray photoelectron spectroscopy study by Torrisi, Alberto, Licciardello, Antonino, Ancarani, Valentina, Cantiano, Massimiliano, Puglisi, Orazio

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