Low-temperature single-crystal Si TFTs fabricated on Si films processed via sequential lateral solidification by Crowder, M.A., Carey, P.G., Smith, P.M., Sposili, R.S., Cho, H.S., Im, J.S.

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Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films by Giust, G.K., Sigmon, T.W., Carey, P.G., Weiss, B., Davis, G.A.

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Excimer laser crystallization and doping of silicon films on plastic substrates by Smith, P. M., Carey, P. G., Sigmon, T. W.

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Polysilicon thin film transistors fabricated on low temperature plastic substrates by Carey, Paul G., Smith, Patrick M., Theiss, Steven D., Wickboldt, Paul

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Ultra-shallow high-concentration boron profiles for CMOS processing by Carey, P.G., Sigmon, T.W., Press, R.L., Fahlen, T.S.

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A shallow junction submicrometer PMOS process without high temperature anneals by Carey, P.G., Weiner, K.H., Sigmon, T.W.

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Fabrication of submicrometer MOSFET's using gas immersion laser doping (GILD) by Carey, P.G., Bezjian, K., Sigmon, T.W., Gildea, P., Magee, T.J.

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Numerical simulation of the gas immersion laser doping (GILD) process in silicon by Landi, E., Carey, P.G., Sigmon, T.W.

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Submicrometer CMOS device fabrication using gas immersion laser doping (GILD) by Carey, P.G., Weiner, K.H., Sigmon, T.W.

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In-situ doping of silicon using the gas immersion laser doping (GILD) process by Carey, P.G., Sigmon, T.W.

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Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth by Weiner, K.H., Carey, P.G., McCarthy, A.M., Sigmon, T.W.

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Low-temperature fabrication of p+-n diodes with 300-Å junction depth by WEINER, K. H, CAREY, P. G, MCCARTHY, A. M, SIGMON, T. W

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An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabrication by Weiner, K.H., Carey, P.G., McCarthy, A.M., Sigmon, T.W.

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IIIB-2 The fabrication submicrometer MOSFET's using laser doping by Carey, P.G., Bezjian, K., Simon, T.W., Magee, T., Gildea, P.

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A solar module fabrication process for HALE solar electric UAVs by Carey, P.G., Aceves, R.C., Colella, N.J., Williams, K.A., Sinton, R.A., Glenn, G.S.

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Polysilicon thin film transistors fabricated at 100/spl deg/C on a flexible plastic substrate by Carey, P.G., Smith, P.M., Thompson, M.O., Sigmon, T.W.

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IIB-5 ultrashallow p+-n junctions suitable for VLSI CMOS by Carey, P.G., Sigmon, T.W., Press, R.L., Fahlen, T.S.

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Poly-Si thin film transistors fabricated on plastic substrates by Carey, P.G., Smith, P.M., Theiss, S.D., Wickboldt, P., Sigmon, T.W., Tung, Y.J., King, T.-J.

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Polysilicon thin film transistors fabricated at 100/spl deg/C on a flexible plastic substrate by Theiss, S.D., Carey, P.G., Smith, P.M., Wickboldt, P., Sigmon, T.W., Tung, Y.J., King, T.-J.

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Radiosensitization of KB Cells in Vitro by Hydrazine Derivatives by Thayer, P. S., Carey, P. G., A. Mc M. Carpenter, Mazuy, K. K.

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