Search Results - Carlström, C.F.

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  1. 1
    Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

    Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy by Paskova, T., Paskov, P.P., Goldys, E.M., Valcheva, E., Darakchieva, V., Södervall, U., Godlewski, M., Zielinski, M., Hautakangas, S., Saarinen, K., Carlström, C.F., Wahab, Q., Monemar, B.

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  2. 2
    Extremely smooth surface morphologies in N2/H2/CH4 based low energy chemically assisted ion beam etching of InP/GaInAsP

    Extremely smooth surface morphologies in N2/H2/CH4 based low energy chemically assisted ion beam etching of InP/GaInAsP by Carlström, C.F., Anand, S., Landgren, G.

    Published in Thin solid films
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  3. 3
    Extremely smooth surface morphologies in N 2/H 2/CH 4 based low energy chemically assisted ion beam etching of InP/GaInAsP

    Extremely smooth surface morphologies in N 2/H 2/CH 4 based low energy chemically assisted ion beam etching of InP/GaInAsP by Carlström, C.F., Anand, S., Landgren, G.

    Published in Thin solid films
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  4. 4
    Doping landscapes in the nanometer range by scanning capacitance microscopy

    Doping landscapes in the nanometer range by scanning capacitance microscopy by Anand, S, Carlström, C.F, Messmer, E.Rodrigeuz, Lourdudoss, S, Landgren, G

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  5. 5
    Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

    Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN by Paskova, T., Paskov, P.P., Goldys, E.M., Darakchieva, V., Södervall, U., Godlewski, M., Zielinski, M., Valcheva, E., Carlström, C.F., Wahab, Q., Monemar, B.

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  6. 6
    A novel in-line characterization method with nanoscale lateral resolution for evaluating dry etching of InP

    A novel in-line characterization method with nanoscale lateral resolution for evaluating dry etching of InP by Douheret, O., Anand, S., Carlstrom, C.F.

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  7. 7
    Polymer free reactive ion beam etching of InP using N/sub 2//(CH/sub 3/)/sub 3/N

    Polymer free reactive ion beam etching of InP using N/sub 2//(CH/sub 3/)/sub 3/N by Carlstrom, C.F., Anand, S., Landgren, G.

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  8. 8
    Cl/sub 2//O/sub 2/- and Cl/sub 2//N/sub 2/-based inductively coupled plasma etching of photonic crystals in InP: sidewall passivation

    Cl/sub 2//O/sub 2/- and Cl/sub 2//N/sub 2/-based inductively coupled plasma etching of photonic crystals in InP: sidewall passivation by van der Heijden, R., Carlstrom, C.F., van der Drift, E., van der Heijden, R.W., Notzel, R., van Veldhoven, R., Karouta, F., Salemink, H.W.M., Talneau, A.

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  9. 9
    Inductively coupled plasma etching of deep photonic crystal holes in InP using Cl/sub 2

    Inductively coupled plasma etching of deep photonic crystal holes in InP using Cl/sub 2 by Carlstrom, C.F., van der Heijden, R., Kok, A.A.M., van der Heijden, R.W., Karouta, F., van der Tol, J.J.G.M., Notzel, R., van Veldhoven, P.J., Salemink, H.W.M.

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  10. 10
    Correlation between morphology and island formation on InP surfaces

    Correlation between morphology and island formation on InP surfaces by Carlstrom, C.F., Anand, S., Niemi, E., Landgren, G.

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  11. 11
    Process damage in chemically assisted ion beam etching of InP/GaInAsP

    Process damage in chemically assisted ion beam etching of InP/GaInAsP by Anand, S., Carlstrom, C.F., Landgren, G., Soderstrom, D., Lourdudoss, S.

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