TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology by Miyoshi, J., Lima, L.P.B., Diniz, J.A., Cavarsan, F.A., Doi, I., Godoy Filho, J., Silva, A.R.

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Characteristics of Silicon Oxide Gate MOS Capacitors Formed by Rapid Thermal Oxidation and Annealing by Cavarsan, F.A., Toma, A., Fo, J.G., Diniz, J.A., Doi, I.

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