Foreword Special Issue on "New Simulation Methodologies for Next-Generation TCAD Tools" by Jungemann, Christoph, Bonani, Fabrizio, Cea, Stephen M., Gnani, Elena, Hong, Sung-Min, Jin, Seonghoon, Liu, Xiaoyan, Moroz, Victor, Verhulst, Anne

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Industrial TCAD: Modeling Atoms to Chips by Stettler, Mark A., Cea, Stephen M., Hasan, Sayed, Jiang, Lei, Keys, Patrick H., Landon, Colin D., Marepalli, Prabakar, Pantuso, Daniel, Weber, Cory E.

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Molecular dynamics modeling of solid phase epitaxial regrowth by Lai, Haoyu, Cea, Stephen M., Kennel, Harold, Dunham, Scott T.

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Compressive Uniaxial Stress Bandstructure Engineering for Transferred-Hole Devices by Kotlyar, Roza, Giles, Martin D, Mudanai, Sivakumar P, Kuhn, Kelin J, Cea, Stephen M, Linton, Thomas D, Pillarisetty, Ravi

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Continuum based modeling of silicon integrated circuit processing: An object oriented approach by Law, Mark E., Cea, Stephen M.

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Modeling of NMOS performance gains from edge dislocation stress by Weber, C. E., Cea, S. M., Deshpande, H., Golonzka, O., Liu, M. Y.

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Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers by Wang, E.X., Matagne, P., Shifren, L., Obradovic, B., Kotlyar, R., Cea, S., Stettler, M., Giles, M.D.

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Long-term effect of thymectomy plus prednisone versus prednisone alone in patients with non-thymomatous myasthenia gravis: 2-year extension of the MGTX randomised trial by Kuo, Hui-Chien, Marx, Alexander, Ströbel, Philipp, Oger, Joel, Evoli, Amelia, Antonini, Giovanni, Witoonpanich, Rawiphan, Barboi, Alexandru C, Amato, Anthony A, Katirji, Bashar, Lecky, Bryan R F, Buckley, Camilla, Massey, Janice M, Barohn, Richard J, Conwit, Robin, Sonett, Joshua R, Kuo, Hui-Chien, Mazia, Claudio, Saluto, Valeria, Dias-Tosta, Elza, Morato-Fernandez, Rubens, Scola, Rosana, Mezei, Michele, White, Chris, Aguayo, Alberto, Zickler, Philipp, Klein, Michael, Weis, Cleo-Aron, Melms, Arthur, Bischof, Felix, Thümler, Björn, Mayer, Eckhard, Clemenzi, Alessandro, Rendina, Erino, Clerico, Marinella, Evoli, Amelia, Mantegazza, Renato, Berta, Emilia, Spinelli, Luisa, Matsuo, Hidenori, Noto, Daisuke, Garcia Ramos, Guillermo, Lipowska, Marta, Silva, Ana, Tucker, Lawrence, Rossouw, Johan, Drummond, Fiona, Yeh, Jiann-Horng, Chiu, Hou-Chang, Witoonpanich, Rawiphan, Attanavanich, Sukasom, Straathof, Chiara, Versteegh, Michel, Krum, Yvonne, Buckley, Camilla, Marshall, Dot, Sussman, Jon, Salajegheh, Mohammad, Zwischenberg, Joseph, Yellick, Mary, Kramer, Jeffrey, Herbelin, Laura, Belsh, Jerry, Langenfeld, John, Benatar, Michael, Usher, Sharon, DeMeester, Steve, Fisher, Janet, Heatwole, Chad, Distad, B. Jane, Weiss, Michael, Chmielewski, Gary, Welsh, Robert, Pawar, Gauri, Jackson, Carlayne, Calhoon, John, Kittrell, Pamela, Hayat, Ghazala, Naunheim, Keith, Holzemer, Eve, Alshekhlee, Amer, Miller, Robert, Forshew, Dallas, Juel, Vern, Lipscomb, Bernadette, Milliken, Jeffrey, Martin, Veronica, Muley, Suraj, Cerfolio, Robert, Young, Angela, Guingrich, Sandy, Michaels, Angi, Fischer, Cindy, Rivner, Michael, Pruitt, Jerry, Hillman, Demetric, Ruel, Ross, Sivak, Mark, Leavitt, Bruce, Vernino, Steven

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Strain Modeling in Advanced MOSFET Devices by Cea, Stephen, Ghani, Tahir, Giles, Martin, Kotlyar, Roza, Matagne, Philippe, Mistry, Kaizad, Obradovic, Borna, Shaheed, Reaz, Shifren, Lucian, Stettler, Mark, Tyagi, Sunit, Wang, Xiaoling, Weber, Cory, Keys, Patrick

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