Search Results - Cha, Suhyeong

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  1. 1
    Study of β -Ga 2 O 3 -Based Thin-Channel MODFET Devices Using a Coupled Drift-Diffusion/Multisubband BTE Solver

    Study of β -Ga 2 O 3 -Based Thin-Channel MODFET Devices Using a Coupled Drift-Diffusion/Multisubband BTE Solver by Cha, Suhyeong, Hong, Sung-Min

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  2. 2
    Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion

    Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion by Cha, Suhyeong, Hong, Sung-Min

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  3. 3
    Deterministic Boltzmann equation solver for graphene sheets including self-heating effects

    Deterministic Boltzmann equation solver for graphene sheets including self-heating effects by Sung-Min Hong, Suhyeong Cha

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  4. 4
    Optimization of Nitrogen Ion Implantation Condition for β-Ga 2 O 3 Vertical MOSFETs via Process and Device Simulation

    Optimization of Nitrogen Ion Implantation Condition for β-Ga 2 O 3 Vertical MOSFETs via Process and Device Simulation by Kim, In Ki, Cha, Suhyeong, Hong, Sung-Min

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  5. 5
    Study of β-Ga2O3-Based Thin-Channel MODFET Devices Using a Coupled Drift-Diffusion/Multisubband BTE Solver

    Study of β-Ga2O3-Based Thin-Channel MODFET Devices Using a Coupled Drift-Diffusion/Multisubband BTE Solver by Cha, Suhyeong, Hong, Sung-Min

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  6. 6
    Optimization of Nitrogen Ion Implantation Condition for \beta -Ga \text O \text Vertical MOSFETs via Process and Device Simulation

    Optimization of Nitrogen Ion Implantation Condition for \beta -Ga \text O \text Vertical MOSFETs via Process and Device Simulation by Kim, In Ki, Cha, Suhyeong, Hong, Sung-Min

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  7. 7
    Optimization of Nitrogen Ion Implantation Condition for β-Ga2O3 Vertical MOSFETs via Process and Device Simulation

    Optimization of Nitrogen Ion Implantation Condition for β-Ga2O3 Vertical MOSFETs via Process and Device Simulation by In Ki Kim, Cha, Suhyeong, Sung-Min, Hong

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  8. 8
    Theoretical Study of Electron Transport Properties in GaN-Based HEMTs Using a Deterministic Multi-Subband Boltzmann Transport Equation Solver

    Theoretical Study of Electron Transport Properties in GaN-Based HEMTs Using a Deterministic Multi-Subband Boltzmann Transport Equation Solver by Cha, Suhyeong, Hong, Sung-Min

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  9. 9
    Self-Aligned Metal-Semiconductor-Metal Varactors Based on the AlGaN/GaN Heterostructure

    Self-Aligned Metal-Semiconductor-Metal Varactors Based on the AlGaN/GaN Heterostructure by Hwang, Ji Hyun, Lee, Gyejung, Nouman, Muhammad Tayyab, Cha, Suhyeong, Hong, Sung-Min, Jang, Jae-Hyung

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  10. 10
    Effects of periodic patterns in recessed ohmic contacts on InAlGaN/GaN heterostructures

    Effects of periodic patterns in recessed ohmic contacts on InAlGaN/GaN heterostructures by Jang, Mi, Park, Juyeong, Hyun Hwang, Ji, Jin Mun, Ha, Cha, Suhyeong, Hong, Sung-Min, Jang, Jae-Hyung

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  11. 11
    A Deterministic Multi-Subband Boltzmann Transport Equation Solver for GaN Based HEMTs

    A Deterministic Multi-Subband Boltzmann Transport Equation Solver for GaN Based HEMTs by Cha, Suhyeong, Hong, Sung-Min

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