Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation by Chagarov, E. A., Porter, L., Kummel, A. C.

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Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide by Kerr, A J, Chagarov, E, Gu, S, Kaufman-Osborn, T, Madisetti, S, Wu, J, Asbeck, P M, Oktyabrsky, S, Kummel, A C

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Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN by Gu, S., Chagarov, E.A., Min, J., Madisetti, S., Novak, S., Oktyabrsky, S., Kerr, A.J., Kaufman-Osborn, T., Kummel, A.C., Asbeck, P.M.

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Density-functional theory computer simulations of CZTS0.25Se0.75 alloy phase diagrams by Chagarov, E., Sardashti, K., Haight, R., Mitzi, D. B., Kummel, A. C.

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Density-functional theory computer simulations of CZTS{sub 0.25}Se{sub 0.75} alloy phase diagrams by Chagarov, E., Sardashti, K., Kummel, A. C., Haight, R., Mitzi, D. B.

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Improvement of the repulsive part of the classical interatomic potential for SiC by Belko, V., Posselt, M., Chagarov, E.

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Influence of polytypism on elementary processes of ion-beam-induced defect production in SiC by Posselt, M, Belko, V, Chagarov, E

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Molecular dynamics simulations of mechanical deformation of amorphous silicon dioxide during chemical–mechanical polishing by Chagarov, Evgueni, Adams, James B.

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Passivation of surface defects on InGaAs (001) and (110) surfaces in preparation for subsequent gate oxide ALD by Edmonds, M., Kent, T. J., Chang, M., Kachian, J., Droopad, R., Chagarov, E., Kummel, A. C.

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Cleaning and passivation of the four horseman of the silicon apocalypse by Kent, T. J., Edmonds, M., Chang, M., Kachian, J., Droopad, R., Chagarov, E., Kummel, A. C.

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X-ray photoemission analysis of CS 2 treated polycrystalline Cu(In,Ga)Se 2 by Nelson, A.J, Gregoratti, L, Chagarov, E, Lonza, D, Marsi, M, Kiskinova, M

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Application of design of experiments methodology to optimization of classical molecular dynamics generation of amorphous SiO2 structure by Chagarov, Evgueni, Adams, James B, Kieffer, John

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Density functional theory simulations and experimental measurements of a-HfO2/a-Si3N4/SiGe, a-HfO2/SiO0.8N0.8/SiGe and a-HfO2/a-SiO/SiGe interfaces by Chagarov, E., Sardashti, K., Edmonds, M., Clemons, M., Kummel, A.

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III-V MOSFETs: Scaling laws, scaling limits, fabrication processes by Rodwell, M. J. W., Shin, B., Lee, Yong-ju, Steiger, S., Lee, S., Ryu, H., Tan, Y., Hegde, G., Wang, L., Chagarov, E., Gossard, A. C., Singisetti, U., Frensley, W., Kummel, A., Palmstrom, C., McIntyre, Paul C, Boykin, T., Klimek, G., Asbeck, P., Wistey, M., Burek, G. J., Carter, A., Baraskar, A., Law, J., Thibeault, B. J., Kim, Eun Ji

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III-V FET channel designs for high current densities and thin inversion layers by Rodwell, M, Frensley, W, Steiger, S, Chagarov, E, Lee, S, Ryu, H, Tan, Y, Hegde, G, Wang, L, Law, J, Boykin, T, Klimek, G, Asbeck, P, Kummel, A, Schulman, J N

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Ab initio calculations of surface phase diagrams of silica polymorphs by CHAGAROV, Evgueni, DEMKOV, Alexander A, ADAMS, James B

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X-ray photoemission analysis of CS2 treated polycrystalline Cu(In, Ga)Se2 by NELSON, A. J, GREGORATTI, L, CHAGAROV, E, LONZA, D, MARSI, M, KISKINOVA, M

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Spectromicroscopic investigation of (NH4)2S treated polycrystalline Cu(In1−xGax)Se2 by Nelson, A.J., Gregoratti, L., Chagarov, E., Lonza, D., Marsi, M., Kiskinova, M.

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Spectromicroscopic investigation of (NH 4) 2S treated polycrystalline Cu(In 1− xGa x)Se 2 by Nelson, A.J., Gregoratti, L., Chagarov, E., Lonza, D., Marsi, M., Kiskinova, M.

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Mechanism of dangling bond elimination on As-rich InGaAs surface by Melitz, W., Chagarov, E., Kent, T., Droopad, R., Ahn, J., Long, R., McIntyre, P. C., Kummel, A. C.

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