Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface by Nguyen, N. V., Chandler-Horowitz, D., Amirtharaj, P. M., Pellegrino, J. G.

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Determination of the optical constants of ZnSe films by spectroscopic ellipsometry by Dahmani, R., Salamanca-Riba, L., Nguyen, N. V., Chandler-Horowitz, D., Jonker, B. T.

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Numerical modeling of silicon photodiodes for high-accuracy applications, Part I. simulation programs by Geist, J., Chandlerhorowitz, D., Robinson, A.M., James, C.R.

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A comparison of techniques for nondestructive composition measurements in CdZnTe substrates by TOBIN, S. P, TOWER, J. P, LEE, J, BALASUBRAMANIAN, R, BOLLONG, A. B, STEINER, T. W, THEWALT, M. L. W, BOWEN, D. K, TANNER, B. K, NORTON, P. W, CHANDLER-HOROWITZ, D, AMIRTHARAJ, P. M, LOPES, V. C, DUNCAN, W. M, SYLLAIOS, A. J, ARD, C. K, GILES, N. C

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Strain effects on the energy bands of ZnSe films grown on GaAs substrates by spectroscopic ellipsometry by Dahmani, R., Salamanca-Riba, L., Nguyen, N. V., Chandler-Horowitz, D., Jonker, B. T.

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Interdigitated hetero InGaAs/GaAs n-i-p-i modulators by Tseng, W.F., Chandler-Horowitz, D., Papanicolaou, N.A., Boos, J.B.

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Numerical Modelling of Short-wavelength Internal Quantum Efficiency by Geist, J, Chandler-Horowitz, D, Köhler, R, Robinson, A M, James, C R

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Nondestructive characterization of oxygen-ion-implanted silicon-on-insulator using multiple-angle ellipsometry by DUTTA, P, CANDELA, G. A, CHANDLER-HOROWITZ, D, MARCHIANDO, J. F, PECKERAR, M. C

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Principal angle spectroscopic ellipsometry utilizing a rotating analyzer by Chandler-Horowitz, D, Candela, G A

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The Raman spectrum of carbon in silicon by FORMAN, R. A, BELL, M. I, MYERS, D. R, CHANDLER-HOROWITZ, D

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