Advanced thin-film silicon-on-sapphire technology: microwave circuit applications by Johnson, R.A., de la Houssaye, P.R., Chang, C.E., Pin-Fan Chen, Wood, M.E., Garcia, G.A., Lagnado, I., Asbeck, P.M.

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Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design by Zampardi, P.J., Chang, C.E., Fitzsimmons, S., Pierson, R.L., McDermott, B.T., Chen, P.F., Asbeck, P.

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Uncovering Buried Structure and Interfaces in Molecular Photovoltaics by Gilchrist, James B., Basey-Fisher, Toby. H., Chang, Sharon C'E., Scheltens, Frank, McComb, David W., Heutz, Sandrine

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Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications by Chang, C.E., Asbeck, P.M., Wang, K.-C., Brown, E.R.

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A 10-Gb/s high-isolation, 16/spl times/16 crosspoint switch implemented with AlGaAs/GaAs HBT's by Metzger, A.G., Chang, C.E., Pedrotti, K.D., Beccue, S.M., Keh-Chung Wang, Asbeck, P.M.

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A 10-Gb/s high-isolation, 16×16 crosspoint switch implemented with AlGaAs/GaAs HBT's by Metzger, A.G, Chang, C.E, Pedrotti, K.D, Beccue, S.M, Wang, Keh-Chung, Asbeck, P.M

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Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon by Johnson, R.A., Chang, C.E., Asbeck, P.M., Wood, M.E., Garcia, G.A., Lagnado, I.

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Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET's by de la Houssaye, P.R., Chang, C.E., Offord, B., Imthurn, G., Johnson, R., Asbeck, P.M., Garcia, G.A., Lagnado, I.

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An implementation of embedded RESTful Web services by Chang, C.E., Mohd-Yasin, F., Mustapha, A.K.

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A packaged 3 GHz timing interface unit for a laser altimeter system by Jani, D.B., Chang, C.E., Wang, K.-C.

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Microwave characterization of sub-micron n- and p-channel MOSFETs fabricated with thin film Silicon-on-Sapphire by Chang, C.E., Asbeck, P.M., de la Houssaye, P.R., Imthurn, G., Garcia, G.A., Lagnado, I.

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Novel HBT structure for high f/sub t/ at low current density by Chang, C.E., Asbeck, P.M., Tran, L.T., Streit, D.C., Oki, A.K.

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Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation by Ho, M.C., Johnson, R.A., Chang, C.E., Ho, W.J., Pehlke, D.R., Zampardi, P.J., Chang, M.F., Asbeck, P.M.

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Microwave characteristics of high f/sub max/ low noise thin film silicon-on-sapphire MOSFETs by Johnson, R.A., Chang, C.E., de la Houssaye, P.R., Garcia, G.A., Lagnado, I., Asbeck, P.M.

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Silicon MOSFETs with very low microwave noise by De La Houssaye, P.R., Chang, C.E., Offord, B., Johnson, R., Asbeck, P.M., Garcia, G.A., Lagnado, I.

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A 10 Gb/s 12x12 cross-point switch implemented with AlGaAs/GaAs heterojunction bipolar transistors by Metzger, A., Chang, C.E., Asbeck, P.M., Wang, K.C., Pedrotti, K., Price, A., Campana, A., Wu, D., Liu, J., Beccue, S.

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SPMNet: a formal methodology for software management by Chang, C.E., Chikuang Chao, Su-Yin Hsieh, Alsalqan, I.

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A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier by Johnson, R.A., Chang, C.E., de la Houssaye, P.R., Wood, M.E., Garcia, G.A., Asbeck, P.M., Lagnado, I.

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Lightly doped emitter HBT for low-power circuits by Chang, C.E., Chen, P.F., Asbeck, P.M., Tran, L.T., Streit, D.C., Oki, A.K.

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40 Gb/s WDM cross-connect with an electronic switching core: preliminary results from the WEST Consortium by Chang, C.E., Pedrotti, K.D., Price, A., Campana, A.D., Meeker, D., Beccue, S.M., Wu, D., Wang, K.C., Metzger, A., Asbeck, P.M., Huff, D., Kwong, N., Swass, M., Zhang, S.Z., Bowers, J.

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