Optimization of cyclosporine therapy with abbreviated area under the curve method in renal transplant by Yang, W.C, Chen, Y.F, King, K.L, Wu, T.H, Chen Hsu, R.Y, Tang, J.J, Loong, C.C, Chou, M.H, Lin, M.F, Lui, W.Y

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State-of-the-art RF/analog foundry technology by Lin, J.C.H., Yeh, T.H., Lee, C.Y., Chen, C.H., Tsay, J.L., Chen, S.H., Hsu, H.M., Chen, C.W., Huang, C.F., Chiang, J.M., Chang, A., Chang, R.Y., Chang, C.L., Wang, S.H., Wu, C.C., Lin, C.Y., Chu, Y.L., Chen, S.M., Hsu, C.K., Liou, R.S., Wong, S.C., Tang, D., Sun, J.Y.C.

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A study on natural background neutron dose by Jiang, S.H., Yeh, J.J., Lin, R.Y., Liang, J.H., Hsu, R.J., Chen, J.R., Liu, J.C., Wang, J.P., Chang, F.D.

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Mobile Charge Induced Breakdown Instability in 700V LDMOSFET by Tsung-Yi Huang, Chiang, P.Y., Huang, C.C., Huang, P.C., Huo, K.H., Su, R.Y., Shih, J.R., Fu-Hsin Chen, Chen, C., Ken Chen, Chien, C.C., Hsu, S.L., Mingo Liu, Gong, J., Chun-Lin Tsai

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Tests of quantum chromodynamics and a direct measurement of the strong coupling constant αs at √ s=30 GeV by Barber, D.P., Becker, U., Benda, H., Boehm, A., Branson, J.G., Bron, J., Buikman, D., Burger, J., Chang, C.C., Chen, H.S., Chen, M., Cheng, C.P., Chu, Y.S., Clare, R., Duinker, P., Fang, G.Y., Fesefeldt, H., Fong, D., Fukushima, M., Guo, J.C., Hariri, A., Herten, G., Ho, M.C., Hsu, H.K., Hsu, T.T., Kadel, R.W., Krenz, W., Li, J., Li, Q.Z., Lu, M., Luckey, D., Ma, C.M., Ma, D.A., Massaro, G.G.G., Matsuda, T., Newman, H., Pohl, M., Poschmann, F.P., Revol, J.P., Rohde, M., Rykaczewski, H., Sinram, K., Tang, H.W., Tang, L.G., Ting, Samuel C.C., Tung, K.L., Vannucci, F., Wang, X.R., Wei, P.S., White, M., Wu, G.H., Wu, T.W., Xi, J.P., Yang, P.C., Yu, X.H., Zhang, N.L., Zhu, R.Y.

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Experimental Study of Electroweak Parameters at PETRA Energies ( 12 <~ E c . m . <~ 36.7 GeV) by Barber, D. P., Becker, U., Bei, G. D., Berghoff, G., Böhm, A., Branson, J. G., Bron, J., Buikman, D., Burger, J. D., Capell, M., Chang, C. C., Chen, G. F., Chen, H. S., Chen, M., Cheng, C. P., Chu, Y. S., Clare, R., Duinker, P., Fang, G. Y., Feng, Z. Y., Fesefeldt, H. S., Fong, D., Fukushima, M., Guo, J. C., Hariri, A., Harting, D., Herten, G., Ho, M. C., Hsu, T. T., Ilyas, M. M., Jiang, D. Z., Kadel, R., Krenz, W., Li, Q. Z., Luckey, D., Luit, E. J., Ma, C. M., Massaro, G. G. G., Matsuda, T., Newman, H., Pohl, M., Poschmann, F. P., Revol, J. P., Rohde, M., Rykaczewski, H., Schulz, I., Sinram, K., Steuer, M., Swider, G. M., Tang, H. W., Teuchert, D., Ting, Samuel C. C., Tung, K. L., Vannucci, F., Wang, Y. X., Warnock, J., White, M., Wu, S. X., Yang, P. C., Yu, C. C., Zeng, Y. Q., Zhang, N. L., Zhu, R. Y.

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Silicon integrated high performance inductors in a 0.18 /spl mu/m CMOS technology for MMIC by Heng-Ming Hsu, Jiong-Guang Su, Shyh-Chyi Wong, Yuan-Chen Sun, Chun-Yen Chang, Tiao-Yuan Huang, Tsai, C.C., Lin, C.H., Liou, R.S., Chang, R.Y., Yeh, T.H., Chen, C.H., Huang, C.F., Huang, H.D., Chen, C.W.

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Extended 0.13 /spl mu/m CMOS technology for the ultra high-speed and MS/RF application segments by Chang, C.S., Chao, C.P., Leung, Y.K., Lin, C.H., Hsu, H.-M., Wang, Y.P., Chang, S.Y., Chiu, T.H., Shyu, J.S., Wu, C.C., Wang, C.H., Chang, R.Y., Chen, C.W., Huang, C.F., Chen, C.H., Chen, S.H., Yeh, T.H., Cheng, J.Y., Liaw, J.J., Chu, Y.L., Ong, T.C., Yu, M.C., Yu, C.H., Lin, H.J., Tao, H.J., Liang, M.S., See, Y.C., Diaz, C.H., Sun, Y.C.

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A highly manufacturable 0.25 /spl mu/m multiple-Vt dual gate oxide CMOS process for logic/embedded IC foundry technology by Chang, M.H., Ting, J.K., Shy, J.S., Chen, L., Liu, C.W., Wu, J.Y., Pan, K.H., Hou, C.S., Tu, C.C., Chen, Y.H., Sue, S.L., Jang, S.M., Yang, S.C., Tsai, C.S., Chen, C.H., Tao, H.J., Tsai, C.C., Hsieh, H.C., Wang, Y.Y., Chang, R.Y., Cheng, K.B., Chu, T.Y., Yen, T.N., Wang, P.S., Weng, J.W., Hsu, J.H., Ho, Y.S., Ho, C.H., Huang, Y.C., Shiue, R.Y., Liew, B.K., Yu, C.H., Sun, S.C., Sun, J.Y.C.

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Study of electron-positron collisions at the highest PETRA energy by Barber, D.P., Becker, U., Benda, H., Boehm, A., Branson, J.G., Bron, J., Buikman, D., Burger, J., Chang, C.C., Chen, H.S., Chen, M., Cheng, C.P., Chu, Y.S., Clare, R., Duinker, P., Fang, G.Y., Fesefeldt, H., Fong, D., Fukushima, M., Guo, J.C., Herten, G., Ho, M.C., Hsu, K.K., Hsu, T.T., Kadel, R.W., Krenz, W., Li, J., Li, Q.Z., Lu, M., Luckey, D., Ma, D.A., Ma, C.M., Massaro, G.G.G., Matsuda, T., Newman, H., Paradiso, J., Poschmann, F.P., Revol, J.P., Rohde, M., Rykaczewski, H., Sinram, K., Tang, H.W., Tang, L.G., Ting, Samuel C.C., Tung, K.L., Vannucci, F., Wang, X.R., Wei, P.S., White, M., Wu, G.H., Wu, T.W., Xi, J.P., Yang, P.C., Yu, X.H., Zhang, N.L., Zhu, R.Y.

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Physics with high energy electron-positron colliding beams with the MARK J detector by Barber, D.P., Becker, U., Benda, H., Böhm, A., Branson, J.G., Bron, J., Buikman, D., Burger, J.D., Chang, C.C., Chen, H.S., Chen, M., Cheng, C.P., Chu, Y.S., Clare, R., Duinker, P., Fang, G.Y., Fesefeldt, H., Fong, D., Fukushima, M., Guo, J.C., Hariri, A., Herten, G., Ho, M.C., Hsu, H.K., Kadel, R.W., Krenz, W., Li, J., Li, Q.Z., Lu, M., Luckey, D., Ma, C.M., Ma, D.A., Massaro, G.G.G., Matsuda, T., Newman, H., Pohl, M., Poschmann, F.P., Revol, J.P., Rohde, M., Rykaczewski, H., Sinram, K., Tang, H.W., Samuel, L.G.Tang, Ting, C.C., Tung, K.L., Vannucci, F., Wang, X.R., Wei, P.S., White, M., Wu, G.H., Wu, T.W., Xi, J.P., Yang, P.C., Yu, C.C., Yu, X.H., Zhang, N.L., Zhu, R.Y.

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